All MOSFET. AFC1563 Datasheet

 

AFC1563 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFC1563
   Marking Code: 63*
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.06 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: SOT-363

 AFC1563 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFC1563 Datasheet (PDF)

 ..1. Size:1101K  alfa-mos
afc1563.pdf

AFC1563 AFC1563

AFC1563 Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC1563, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/1.0A,RDS(ON)=280m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/0.8A,RDS(ON)=340m@VGS=2.5V These devices are particularly suited for low 20V/0.7A,RDS(ON)=580m@VGS=

 9.1. Size:1025K  alfa-mos
afc1539.pdf

AFC1563 AFC1563

AFC1539 Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC1539, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/0.7A,RDS(ON)=900m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/0.6A,RDS(ON)=1000m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power ma

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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