AFC4599 Datasheet. Specs and Replacement

Type Designator: AFC4599  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SOP-8P

AFC4599 substitution

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AFC4599 datasheet

 ..1. Size:988K  alfa-mos
 afc4599.pdf pdf_icon

AFC4599

AFC4599 Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4599, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 40V/8A,RDS(ON)= 22m @VGS=10V to provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)= 36m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana... See More ⇒

 9.1. Size:885K  alfa-mos
 afc4539ws.pdf pdf_icon

AFC4599

AFC4539WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/5.8A,RDS(ON)=36m @VGS=10V to provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power ... See More ⇒

 9.2. Size:802K  alfa-mos
 afc4510s.pdf pdf_icon

AFC4599

AFC4510S Alfa-MOS 100V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=140m @VGS=10V to provide excellent RDS(ON), low gate charge. 100V/2.0A,RDS(ON)=150m @VGS=4.5V These devices are particularly suited for low P-Channel voltage p... See More ⇒

 9.3. Size:810K  alfa-mos
 afc4516w.pdf pdf_icon

AFC4599

AFC4516W Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4516W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=15m @VGS=10V to provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana... See More ⇒

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Detailed specifications: AFC3346W, AFC3366W, AFC4510S, AFC4516, AFC4516W, AFC4539S, AFC4539WS, AFC4559, STP80NF70, AFC4604W, AFC5521, AFC5604, AFC5606, AFC6332, AFC6601, AFC6602, AFC6604

Keywords - AFC4599 MOSFET specs

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