Справочник MOSFET. AFC4599

 

AFC4599 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AFC4599
   Маркировка: 4599
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 10 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
   Тип корпуса: SOP-8P

 Аналог (замена) для AFC4599

 

 

AFC4599 Datasheet (PDF)

 ..1. Size:988K  alfa-mos
 afc4599.pdf

AFC4599 AFC4599

AFC4599 Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4599, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 40V/8A,RDS(ON)= 22m@VGS=10V to provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)= 36m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana

 9.1. Size:885K  alfa-mos
 afc4539ws.pdf

AFC4599 AFC4599

AFC4539WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/5.8A,RDS(ON)=36m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power

 9.2. Size:802K  alfa-mos
 afc4510s.pdf

AFC4599 AFC4599

AFC4510S Alfa-MOS 100V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=140m@VGS=10V to provide excellent RDS(ON), low gate charge. 100V/2.0A,RDS(ON)=150m@VGS=4.5V These devices are particularly suited for low P-Channel voltage p

 9.3. Size:810K  alfa-mos
 afc4516w.pdf

AFC4599 AFC4599

AFC4516W Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4516W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=15m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana

 9.4. Size:810K  alfa-mos
 afc4516.pdf

AFC4599 AFC4599

AFC4516 Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4516, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=15m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power manage

 9.5. Size:919K  alfa-mos
 afc4559.pdf

AFC4599 AFC4599

AFC4559 Alfa-MOS 60V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4559, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 60V/6.8A,RDS(ON)= 42m@VGS=10V to provide excellent RDS(ON), low gate charge. 60V/5.6A,RDS(ON)= 50m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power

 9.6. Size:885K  alfa-mos
 afc4539s.pdf

AFC4599 AFC4599

AFC4539S Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4539S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/5.8A,RDS(ON)=40m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=50m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power ma

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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