AFC4599 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AFC4599
Тип транзистора: MOSFET
Полярность: NP
Pd ⓘ - Максимальная рассеиваемая мощность: 2.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 110 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
Тип корпуса: SOP-8P
Аналог (замена) для AFC4599
AFC4599 Datasheet (PDF)
afc4599.pdf

AFC4599 Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4599, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 40V/8A,RDS(ON)= 22m@VGS=10V to provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)= 36m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana
afc4539ws.pdf

AFC4539WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/5.8A,RDS(ON)=36m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power
afc4510s.pdf

AFC4510S Alfa-MOS 100V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=140m@VGS=10V to provide excellent RDS(ON), low gate charge. 100V/2.0A,RDS(ON)=150m@VGS=4.5V These devices are particularly suited for low P-Channel voltage p
afc4516w.pdf

AFC4516W Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4516W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=15m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana
Другие MOSFET... AFC3346W , AFC3366W , AFC4510S , AFC4516 , AFC4516W , AFC4539S , AFC4539WS , AFC4559 , 20N50 , AFC4604W , AFC5521 , AFC5604 , AFC5606 , AFC6332 , AFC6601 , AFC6602 , AFC6604 .
History: CJ3404 | FR5305 | JCS12N65CEI | SL2318 | IPA80R360P7 | PDP3960 | UPA1716
History: CJ3404 | FR5305 | JCS12N65CEI | SL2318 | IPA80R360P7 | PDP3960 | UPA1716



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