All MOSFET. AFC6332 Datasheet

 

AFC6332 Datasheet and Replacement


   Type Designator: AFC6332
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: SOT-363
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AFC6332 Datasheet (PDF)

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AFC6332

AFC6332 Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC6332, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/1.0A,RDS(ON)=280m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/0.8A,RDS(ON)=340m@VGS=2.5V These devices are particularly suited for low 20V/0.7A,RDS(ON)=580m@VGS=

Datasheet: AFC4539S , AFC4539WS , AFC4559 , AFC4599 , AFC4604W , AFC5521 , AFC5604 , AFC5606 , 13N50 , AFC6601 , AFC6602 , AFC6604 , AFC8562 , AFN02N60T220FT , AFN02N60T220T , AFN02N60T251T , AFN04N60T220FT .

History: 2SJ473-01S | IRF7759L2TR1PBF

Keywords - AFC6332 MOSFET datasheet

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