AFC6602 Datasheet. Specs and Replacement
Type Designator: AFC6602 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TSOP-6
AFC6602 substitution
- MOSFET ⓘ Cross-Reference Search
AFC6602 datasheet
afc6602.pdf
AFC6602 Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC6602, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=75m @VGS=10V to provide excellent RDS(ON), low gate charge. 30V/2.6A,RDS(ON)=100m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power m... See More ⇒
afc6601.pdf
AFC6601 Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC6601, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/3.4A,RDS(ON)=68m @VGS=10V to provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=74m @VGS=4.5V These devices are particularly suited for low 30V/2.0A,RDS(ON)=90m @VGS=2... See More ⇒
afc6604.pdf
AFC6604 Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC6604, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/3.5A,RDS(ON)=58m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/2.6A,RDS(ON)=68m @VGS=2.5V These devices are particularly suited for low P-Channel voltage power m... See More ⇒
Detailed specifications: AFC4559, AFC4599, AFC4604W, AFC5521, AFC5604, AFC5606, AFC6332, AFC6601, IRF1407, AFC6604, AFC8562, AFN02N60T220FT, AFN02N60T220T, AFN02N60T251T, AFN04N60T220FT, AFN04N60T220T, AFN04N60T251T
Keywords - AFC6602 MOSFET specs
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