AFC6602 Datasheet and Replacement
Type Designator: AFC6602
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 3.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TSOP-6
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AFC6602 Datasheet (PDF)
afc6602.pdf

AFC6602 Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC6602, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=75m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/2.6A,RDS(ON)=100m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power m
afc6601.pdf

AFC6601 Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC6601, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/3.4A,RDS(ON)=68m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=74m@VGS=4.5V These devices are particularly suited for low 30V/2.0A,RDS(ON)=90m@VGS=2
afc6604.pdf

AFC6604 Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC6604, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/3.5A,RDS(ON)=58m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/2.6A,RDS(ON)=68m@VGS=2.5V These devices are particularly suited for low P-Channel voltage power m
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Keywords - AFC6602 MOSFET datasheet
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History: IRF7473 | 2SK1571



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