AFN02N60T220T Datasheet. Specs and Replacement
Type Designator: AFN02N60T220T 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23.4 nS
Cossⓘ - Output Capacitance: 35.7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: TO-220
AFN02N60T220T substitution
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AFN02N60T220T datasheet
afn02n60t220ft afn02n60t220t afn02n60t251t.pdf
AFN02N60 Alfa-MOS 600V / 2A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN02N60 is an N-channel enhancement mode Power 600V/1A,RDS(ON)=4.2 (MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state... See More ⇒
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