AFN04N60T251T MOSFET. Datasheet pdf. Equivalent
Type Designator: AFN04N60T251T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.16 nC
trⓘ - Rise Time: 26.2 nS
Cossⓘ - Output Capacitance: 57 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO-251
AFN04N60T251T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFN04N60T251T Datasheet (PDF)
..1. Size:758K alfa-mos
afn04n60t220ft afn04n60t220t afn04n60t251t.pdf
afn04n60t220ft afn04n60t220t afn04n60t251t.pdf
AFN04N60 Alfa-MOS 600V / 4A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN04N60 is an N-channel enhancement mode Power 600V/2A,RDS(ON)=2.4(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
