AFN04N60T251T Datasheet. Specs and Replacement

Type Designator: AFN04N60T251T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26.2 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO-251

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AFN04N60T251T datasheet

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AFN04N60T251T

AFN04N60 Alfa-MOS 600V / 4A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN04N60 is an N-channel enhancement mode Power 600V/2A,RDS(ON)=2.4 (MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state... See More ⇒

Detailed specifications: AFC6602, AFC6604, AFC8562, AFN02N60T220FT, AFN02N60T220T, AFN02N60T251T, AFN04N60T220FT, AFN04N60T220T, 20N50, AFN06N60T220FT, AFN06N60T251T, AFN07N65T220FT, AFN07N65T220T, AFN08N50T220FT, AFN08N50T220T, AFN1012, AFN1012E

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