All MOSFET. AFN06N60T251T Datasheet


AFN06N60T251T MOSFET. Datasheet pdf. Equivalent

Type Designator: AFN06N60T251T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13.32 nC

Rise Time (tr): 42.67 nS

Drain-Source Capacitance (Cd): 83.6 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO-251

AFN06N60T251T Transistor Equivalent Substitute - MOSFET Cross-Reference Search


AFN06N60T251T Datasheet (PDF)

0.1. afn06n60t220ft afn06n60t251t.pdf Size:528K _alfa-mos


AFN06N60 Alfa-MOS 600V / 6A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN06N60 is an N-channel enhancement mode Power 600V/3A,RDS(ON)=1.5Ω(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

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