All MOSFET. AFN06N60T251T Datasheet

 

AFN06N60T251T Datasheet and Replacement


   Type Designator: AFN06N60T251T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 42.67 nS
   Cossⓘ - Output Capacitance: 83.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-251
      - MOSFET Cross-Reference Search

 

AFN06N60T251T Datasheet (PDF)

 ..1. Size:528K  alfa-mos
 afn06n60t220ft afn06n60t251t.pdf pdf_icon

AFN06N60T251T

AFN06N60 Alfa-MOS 600V / 6A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN06N60 is an N-channel enhancement mode Power 600V/3A,RDS(ON)=1.5(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FQPF27N25 | AO3407A | FDMC3612 | 2SJ254 | 2SK1626 | SFS06R02UGF | GSM4401S

Keywords - AFN06N60T251T MOSFET datasheet

 AFN06N60T251T cross reference
 AFN06N60T251T equivalent finder
 AFN06N60T251T lookup
 AFN06N60T251T substitution
 AFN06N60T251T replacement

 

 
Back to Top

 


 
.