All MOSFET. AFN08N50T220FT Datasheet

 

AFN08N50T220FT Datasheet and Replacement


   Type Designator: AFN08N50T220FT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 59.6 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-220F
 

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AFN08N50T220FT Datasheet (PDF)

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AFN08N50T220FT

AFN08N50 Alfa-MOS 500V / 8A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN08N50 is an N-channel enhancement mode Power 500V/4A,RDS(ON)=0.9(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

Datasheet: AFN02N60T251T , AFN04N60T220FT , AFN04N60T220T , AFN04N60T251T , AFN06N60T220FT , AFN06N60T251T , AFN07N65T220FT , AFN07N65T220T , IRF830 , AFN08N50T220T , AFN1012 , AFN1012E , AFN1024 , AFN1024E , AFN1032 , AFN1034 , AFN1072 .

History: 25N10G-TM3-T | APT4080BN | NTHS5445T1

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