AFN08N50T220T Datasheet and Replacement
Type Designator: AFN08N50T220T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 134 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 14.7 nC
tr ⓘ - Rise Time: 59.6 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO-220
AFN08N50T220T substitution
AFN08N50T220T Datasheet (PDF)
afn08n50t220ft afn08n50t220t.pdf
AFN08N50 Alfa-MOS 500V / 8A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN08N50 is an N-channel enhancement mode Power 500V/4A,RDS(ON)=0.9(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Keywords - AFN08N50T220T MOSFET datasheet
AFN08N50T220T cross reference
AFN08N50T220T equivalent finder
AFN08N50T220T lookup
AFN08N50T220T substitution
AFN08N50T220T replacement
