AFN08N50T220T Datasheet. Specs and Replacement
Type Designator: AFN08N50T220T 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 134 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 59.6 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO-220
AFN08N50T220T substitution
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AFN08N50T220T datasheet
afn08n50t220ft afn08n50t220t.pdf
AFN08N50 Alfa-MOS 500V / 8A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN08N50 is an N-channel enhancement mode Power 500V/4A,RDS(ON)=0.9 (MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state... See More ⇒
Detailed specifications: AFN04N60T220FT, AFN04N60T220T, AFN04N60T251T, AFN06N60T220FT, AFN06N60T251T, AFN07N65T220FT, AFN07N65T220T, AFN08N50T220FT, 8N60, AFN1012, AFN1012E, AFN1024, AFN1024E, AFN1032, AFN1034, AFN1072, AFN10N60T220FT
Keywords - AFN08N50T220T MOSFET specs
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