AFN1501S Datasheet. Specs and Replacement

Type Designator: AFN1501S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm

Package: TO-220

AFN1501S substitution

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AFN1501S datasheet

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AFN1501S

AFN1501S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1501S, N-Channel enhancement mode 100V/60A,RDS(ON)= 6.4m @VGS=10V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely low provide excellent RDS(ON), low gate charge. RDS (ON) These devices are particularly suited for low voltage TO-220-... See More ⇒

 9.1. Size:575K  alfa-mos
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AFN1501S

AFN1510S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1510S, N-Channel enhancement mode 100V/25A,RDS(ON)= 46m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/20A,RDS(ON)= 52m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f... See More ⇒

 9.2. Size:574K  alfa-mos
 afn1530.pdf pdf_icon

AFN1501S

AFN1530 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1530, N-Channel enhancement mode 100V/15A,RDS(ON)= 115m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/12A,RDS(ON)= 125m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f... See More ⇒

 9.3. Size:574K  alfa-mos
 afn1520.pdf pdf_icon

AFN1501S

AFN1520 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1520, N-Channel enhancement mode 100V/4.0A,RDS(ON)= 320m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.0A,RDS(ON)= 340m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited... See More ⇒

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Detailed specifications: AFN12N60T220T, AFN12N65T220FT, AFN12N65T220T, AFN1304, AFN1304E, AFN1306, AFN1330S, AFN1443, 60N06, AFN1510S, AFN1520, AFN1530, AFN1912, AFN1912E, AFN1932, AFN2014, AFN2302AS

Keywords - AFN1501S MOSFET specs

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