AFN1501S datasheet, аналоги, основные параметры

Наименование производителя: AFN1501S  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 75 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 25 ns

Cossⓘ - Выходная емкость: 580 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0064 Ohm

Тип корпуса: TO-220

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Аналог (замена) для AFN1501S

- подборⓘ MOSFET транзистора по параметрам

 

AFN1501S даташит

 ..1. Size:658K  alfa-mos
 afn1501s.pdf pdf_icon

AFN1501S

AFN1501S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1501S, N-Channel enhancement mode 100V/60A,RDS(ON)= 6.4m @VGS=10V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely low provide excellent RDS(ON), low gate charge. RDS (ON) These devices are particularly suited for low voltage TO-220-

 9.1. Size:575K  alfa-mos
 afn1510s.pdf pdf_icon

AFN1501S

AFN1510S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1510S, N-Channel enhancement mode 100V/25A,RDS(ON)= 46m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/20A,RDS(ON)= 52m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f

 9.2. Size:574K  alfa-mos
 afn1530.pdf pdf_icon

AFN1501S

AFN1530 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1530, N-Channel enhancement mode 100V/15A,RDS(ON)= 115m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/12A,RDS(ON)= 125m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f

 9.3. Size:574K  alfa-mos
 afn1520.pdf pdf_icon

AFN1501S

AFN1520 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1520, N-Channel enhancement mode 100V/4.0A,RDS(ON)= 320m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.0A,RDS(ON)= 340m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited

ПОКАЗАТЬ ЕЩЁ

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