AFN1530 Datasheet. Specs and Replacement

Type Designator: AFN1530  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm

Package: TO-220

AFN1530 substitution

- MOSFET ⓘ Cross-Reference Search

 

AFN1530 datasheet

 ..1. Size:574K  alfa-mos
 afn1530.pdf pdf_icon

AFN1530

AFN1530 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1530, N-Channel enhancement mode 100V/15A,RDS(ON)= 115m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/12A,RDS(ON)= 125m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f... See More ⇒

 9.1. Size:658K  alfa-mos
 afn1501s.pdf pdf_icon

AFN1530

AFN1501S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1501S, N-Channel enhancement mode 100V/60A,RDS(ON)= 6.4m @VGS=10V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely low provide excellent RDS(ON), low gate charge. RDS (ON) These devices are particularly suited for low voltage TO-220-... See More ⇒

 9.2. Size:575K  alfa-mos
 afn1510s.pdf pdf_icon

AFN1530

AFN1510S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1510S, N-Channel enhancement mode 100V/25A,RDS(ON)= 46m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/20A,RDS(ON)= 52m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f... See More ⇒

 9.3. Size:574K  alfa-mos
 afn1520.pdf pdf_icon

AFN1530

AFN1520 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1520, N-Channel enhancement mode 100V/4.0A,RDS(ON)= 320m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.0A,RDS(ON)= 340m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited... See More ⇒

SHOW MORE

Detailed specifications: AFN1304, AFN1304E, AFN1306, AFN1330S, AFN1443, AFN1501S, AFN1510S, AFN1520, IRF730, AFN1912, AFN1912E, AFN1932, AFN2014, AFN2302AS, AFN2302S, AFN2304, AFN2304A

Keywords - AFN1530 MOSFET specs

 AFN1530 cross reference

 AFN1530 equivalent finder

 AFN1530 pdf lookup

 AFN1530 substitution

 AFN1530 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.