AFN1530 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AFN1530
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 75 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 10 nC
Время нарастания (tr): 8 ns
Выходная емкость (Cd): 50 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.115 Ohm
Тип корпуса: TO-220
AFN1530 Datasheet (PDF)
afn1530.pdf
AFN1530 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1530, N-Channel enhancement mode 100V/15A,RDS(ON)= 115m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/12A,RDS(ON)= 125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f
afn1501s.pdf
AFN1501S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1501S, N-Channel enhancement mode 100V/60A,RDS(ON)= 6.4m@VGS=10V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely low provide excellent RDS(ON), low gate charge. RDS (ON) These devices are particularly suited for low voltage TO-220-
afn1510s.pdf
AFN1510S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1510S, N-Channel enhancement mode 100V/25A,RDS(ON)= 46m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/20A,RDS(ON)= 52m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f
afn1520.pdf
AFN1520 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1520, N-Channel enhancement mode 100V/4.0A,RDS(ON)= 320m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.0A,RDS(ON)= 340m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited
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