All MOSFET. AFN2302AS Datasheet

 

AFN2302AS Datasheet and Replacement


   Type Designator: AFN2302AS
   Marking Code: S2*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.4 nC
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOT-23
 

 AFN2302AS substitution

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AFN2302AS Datasheet (PDF)

 ..1. Size:652K  alfa-mos
 afn2302as.pdf pdf_icon

AFN2302AS

AFN2302AS Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=110m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 7.1. Size:520K  alfa-mos
 afn2302s.pdf pdf_icon

AFN2302AS

AFN2302S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=100m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 8.1. Size:721K  alfa-mos
 afn2306ae.pdf pdf_icon

AFN2302AS

AFN2306AE Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low

 8.2. Size:476K  alfa-mos
 afn2304s.pdf pdf_icon

AFN2302AS

AFN2304S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

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Datasheet: AFN1501S , AFN1510S , AFN1520 , AFN1530 , AFN1912 , AFN1912E , AFN1932 , AFN2014 , 20N60 , AFN2302S , AFN2304 , AFN2304A , AFN2304AS , AFN2304S , AFN2306A , AFN2306AE , AFN2308 .

History: SFF250MUB | SFF11N80B | SFF110S | TK16C60W | SSF11NS60F | SSF11NS60 | SFF116N10Z

Keywords - AFN2302AS MOSFET datasheet

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