All MOSFET. AFN2306A Datasheet

 

AFN2306A Datasheet and Replacement


   Type Designator: AFN2306A
   Marking Code: 6A*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 1.06 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: SOT-23
 
   - MOSFET ⓘ Cross-Reference Search

 

AFN2306A Datasheet (PDF)

 ..1. Size:719K  alfa-mos
 afn2306a.pdf pdf_icon

AFN2306A

AFN2306A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low

 0.1. Size:721K  alfa-mos
 afn2306ae.pdf pdf_icon

AFN2306A

AFN2306AE Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low

 8.1. Size:476K  alfa-mos
 afn2304s.pdf pdf_icon

AFN2306A

AFN2304S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.2. Size:608K  alfa-mos
 afn2304as.pdf pdf_icon

AFN2306A

AFN2304AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

SHOW MORE

Datasheet: AFN1932 , AFN2014 , AFN2302AS , AFN2302S , AFN2304 , AFN2304A , AFN2304AS , AFN2304S , IRFP460 , AFN2306AE , AFN2308 , AFN2308A , AFN2312 , AFN2312A , AFN2318 , AFN2318A , AFN2324 .

History: 2SK3403B | DMP2004TK | OSG60R180HSF

Keywords - AFN2306A MOSFET datasheet

 AFN2306A cross reference
 AFN2306A equivalent finder
 AFN2306A lookup
 AFN2306A substitution
 AFN2306A replacement

 

 
Back to Top

 


 
.