AFN2306A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AFN2306A
Маркировка: 6A*
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.25 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 1.8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 1.06 nC
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 20 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.28 Ohm
Тип корпуса: SOT-23
AFN2306A Datasheet (PDF)
afn2306a.pdf
AFN2306A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low
afn2306ae.pdf
AFN2306AE Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low
afn2304s.pdf
AFN2304S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
afn2304as.pdf
AFN2304AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn2308.pdf
AFN2308 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2308, N-Channel enhancement mode 60V/3.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.8A,RDS(ON)=140m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
afn2308a.pdf
AFN2308A Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2308A, N-Channel enhancement mode 60V/2.8A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.0A,RDS(ON)=145m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn2302as.pdf
AFN2302AS Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=110m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite
afn2304.pdf
AFN2304 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.8A,RDS(ON)=105m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn2304a.pdf
AFN2304A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f
afn2302s.pdf
AFN2302S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=100m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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