Справочник MOSFET. AFN2306A

 

AFN2306A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AFN2306A
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 20 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
   Тип корпуса: SOT-23
 

 Аналог (замена) для AFN2306A

   - подбор ⓘ MOSFET транзистора по параметрам

 

AFN2306A Datasheet (PDF)

 ..1. Size:719K  alfa-mos
 afn2306a.pdf pdf_icon

AFN2306A

AFN2306A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low

 0.1. Size:721K  alfa-mos
 afn2306ae.pdf pdf_icon

AFN2306A

AFN2306AE Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low

 8.1. Size:476K  alfa-mos
 afn2304s.pdf pdf_icon

AFN2306A

AFN2304S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.2. Size:608K  alfa-mos
 afn2304as.pdf pdf_icon

AFN2306A

AFN2304AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

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Другие MOSFET... AFN1932 , AFN2014 , AFN2302AS , AFN2302S , AFN2304 , AFN2304A , AFN2304AS , AFN2304S , IRFP460 , AFN2306AE , AFN2308 , AFN2308A , AFN2312 , AFN2312A , AFN2318 , AFN2318A , AFN2324 .

History: CJ3139KDW | APM4012NU | FDS5170N7 | CEB6060N | IXTQ96N15P | F5043

 

 
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