All MOSFET. AFN2604 Datasheet

 

AFN2604 Datasheet and Replacement


   Type Designator: AFN2604
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-252
 

 AFN2604 substitution

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AFN2604 Datasheet (PDF)

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AFN2604

AFN2604 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2604, N-Channel enhancement mode 40V/20A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/12A,RDS(ON)= 40m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

Datasheet: AFN2318A , AFN2324 , AFN2324A , AFN2330 , AFN2330A , AFN2336A , AFN2354 , AFN2376 , AON7408 , AFN2912W , AFN3006S , AFN3009S , AFN3015S , AFN3016S , AFN3019S , AFN3025S , AFN3030 .

History: PMN30UNE | PHN203 | SI7447ADP | IPI037N06L3G | IXFV30N50PS | IXFV30N60PS | PHP191NQ06LT

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