AFN2604 Datasheet. Specs and Replacement

Type Designator: AFN2604  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO-252

AFN2604 substitution

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AFN2604 datasheet

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AFN2604

AFN2604 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2604, N-Channel enhancement mode 40V/20A,RDS(ON)= 22m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/12A,RDS(ON)= 40m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

Detailed specifications: AFN2318A, AFN2324, AFN2324A, AFN2330, AFN2330A, AFN2336A, AFN2354, AFN2376, 7N65, AFN2912W, AFN3006S, AFN3009S, AFN3015S, AFN3016S, AFN3019S, AFN3025S, AFN3030

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