All MOSFET. AFN2604 Datasheet

 

AFN2604 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFN2604
   Marking Code: 2604
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-252

 AFN2604 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFN2604 Datasheet (PDF)

 ..1. Size:832K  alfa-mos
 afn2604.pdf

AFN2604 AFN2604

AFN2604 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2604, N-Channel enhancement mode 40V/20A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/12A,RDS(ON)= 40m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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