All MOSFET. IRLS520A Datasheet

 

IRLS520A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLS520A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 7.2 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 10.2 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO220F

 IRLS520A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLS520A Datasheet (PDF)

 ..1. Size:892K  samsung
 irls520a.pdf

IRLS520A IRLS520A

Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.22 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 7.2 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.176 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum

 9.1. Size:945K  samsung
 irls530a.pdf

IRLS520A IRLS520A

Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.12 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10.7 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.101 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings

 9.2. Size:889K  samsung
 irls510a.pdf

IRLS520A IRLS520A

Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 4.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.336 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratin

 9.3. Size:938K  samsung
 irls540a.pdf

IRLS520A IRLS520A

Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.058 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 17 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.046 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rating

Datasheet: IRLR230A , IRLR2703 , IRLR2705 , IRLR2905 , IRLR3103 , IRLR3303 , IRLR3410 , IRLS510A , 10N65 , IRLS530A , IRLS540A , IRLS610A , IRLS620A , IRLS630A , IRLS640A , IRLSZ14A , IRLSZ24A .

 

 
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