All MOSFET. AFN3025S Datasheet

 

AFN3025S Datasheet and Replacement


   Type Designator: AFN3025S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO-252
 
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AFN3025S Datasheet (PDF)

 ..1. Size:772K  alfa-mos
 afn3025s.pdf pdf_icon

AFN3025S

AFN3025S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3025S, N-Channel enhancement mode 30V/9.0A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/7.0A,RDS(ON)=36m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/5.0A,RDS(ON)=42m@VGS=2.5V These devices are particularly suited for low Sup

 9.1. Size:853K  alfa-mos
 afn3019s.pdf pdf_icon

AFN3025S

AFN3019S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3019S, N-Channel enhancement mode 30V/35A,RDS(ON)=9m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=13m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l

 9.2. Size:863K  alfa-mos
 afn3006s.pdf pdf_icon

AFN3025S

AFN3006S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3006S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=9m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.3. Size:823K  alfa-mos
 afn3009s.pdf pdf_icon

AFN3025S

AFN3009S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3009S, N-Channel enhancement mode 30V/35A,RDS(ON)=8.5m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=11.5m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

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Datasheet: AFN2376 , AFN2604 , AFN2912W , AFN3006S , AFN3009S , AFN3015S , AFN3016S , AFN3019S , K4145 , AFN3030 , AFN3302W , AFN3306WS , AFN3309WS , AFN3310W , AFN3316W , AFN3400 , AFN3400A .

History: IXTQ250N075T

Keywords - AFN3025S MOSFET datasheet

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