Справочник MOSFET. AFN3025S

 

AFN3025S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AFN3025S
   Маркировка: 3025S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 3 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для AFN3025S

 

 

AFN3025S Datasheet (PDF)

 ..1. Size:772K  alfa-mos
 afn3025s.pdf

AFN3025S AFN3025S

AFN3025S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3025S, N-Channel enhancement mode 30V/9.0A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/7.0A,RDS(ON)=36m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/5.0A,RDS(ON)=42m@VGS=2.5V These devices are particularly suited for low Sup

 9.1. Size:853K  alfa-mos
 afn3019s.pdf

AFN3025S AFN3025S

AFN3019S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3019S, N-Channel enhancement mode 30V/35A,RDS(ON)=9m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=13m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l

 9.2. Size:863K  alfa-mos
 afn3006s.pdf

AFN3025S AFN3025S

AFN3006S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3006S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=9m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.3. Size:823K  alfa-mos
 afn3009s.pdf

AFN3025S AFN3025S

AFN3009S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3009S, N-Channel enhancement mode 30V/35A,RDS(ON)=8.5m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=11.5m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

 9.4. Size:863K  alfa-mos
 afn3015s.pdf

AFN3025S AFN3025S

AFN3015S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3015S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.1m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=6.8m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.5. Size:833K  alfa-mos
 afn3030.pdf

AFN3025S AFN3025S

AFN3030 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3030, N-Channel enhancement mode 30V/12A,RDS(ON)= 30m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)= 40m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.6. Size:824K  alfa-mos
 afn3016s.pdf

AFN3025S AFN3025S

AFN3016S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3016S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=9m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

Другие MOSFET... AFN2376 , AFN2604 , AFN2912W , AFN3006S , AFN3009S , AFN3015S , AFN3016S , AFN3019S , 12N60 , AFN3030 , AFN3302W , AFN3306WS , AFN3309WS , AFN3310W , AFN3316W , AFN3400 , AFN3400A .

 

 
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