AFN3306WS Datasheet. Specs and Replacement

Type Designator: AFN3306WS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm

Package: DFN3X3

AFN3306WS substitution

- MOSFET ⓘ Cross-Reference Search

 

AFN3306WS datasheet

 ..1. Size:596K  alfa-mos
 afn3306ws.pdf pdf_icon

AFN3306WS

AFN3306WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=7.4m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited ... See More ⇒

 8.1. Size:588K  alfa-mos
 afn3309ws.pdf pdf_icon

AFN3306WS

AFN3309WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=11m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for... See More ⇒

 8.2. Size:577K  alfa-mos
 afn3302w.pdf pdf_icon

AFN3306WS

AFN3302W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3302W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/12A,RDS(ON)=18m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=26m @VGS=1.8V These devices are particularly suited for low Super... See More ⇒

 9.1. Size:498K  alfa-mos
 afn3310w.pdf pdf_icon

AFN3306WS

AFN3310W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=19m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

SHOW MORE

Detailed specifications: AFN3006S, AFN3009S, AFN3015S, AFN3016S, AFN3019S, AFN3025S, AFN3030, AFN3302W, IRLB4132, AFN3309WS, AFN3310W, AFN3316W, AFN3400, AFN3400A, AFN3400AS, AFN3400S, AFN3402

Keywords - AFN3306WS MOSFET specs

 AFN3306WS cross reference

 AFN3306WS equivalent finder

 AFN3306WS pdf lookup

 AFN3306WS substitution

 AFN3306WS replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.