AFN3306WS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AFN3306WS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 40 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 50 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 550 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0056 Ohm
Тип корпуса: DFN3X3
AFN3306WS Datasheet (PDF)
afn3306ws.pdf
AFN3306WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=7.4m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn3309ws.pdf
AFN3309WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=11m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn3302w.pdf
AFN3302W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3302W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/12A,RDS(ON)=18m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=26m@VGS=1.8V These devices are particularly suited for low Super
afn3310w.pdf
AFN3310W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=19m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn3316w.pdf
AFN3316W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3316W, N-Channel enhancement mode 60V/8A,RDS(ON)=140m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/6A,RDS(ON)=148m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NCE65NF190K | MMD65R380QRH | LNG4N65
