AFN3406AS Datasheet. Specs and Replacement

Type Designator: AFN3406AS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT-23

AFN3406AS substitution

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AFN3406AS datasheet

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AFN3406AS

AFN3406AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.4A,RDS(ON)=55m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited ... See More ⇒

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AFN3406AS

AFN3406A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/1.8A,RDS(ON)=58m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

 7.1. Size:578K  alfa-mos
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AFN3406AS

AFN3406 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

 7.2. Size:578K  alfa-mos
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AFN3406AS

AFN3406S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

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Detailed specifications: AFN3400A, AFN3400AS, AFN3400S, AFN3402, AFN3402A, AFN3404, AFN3406, AFN3406A, IRFB3607, AFN3406S, AFN3410, AFN3414, AFN3414A, AFN3414S, AFN3416, AFN3424, AFN3424A

Keywords - AFN3406AS MOSFET specs

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