AFN3406AS - аналоги и даташиты транзистора

 

AFN3406AS - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AFN3406AS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
   Тип корпуса: SOT-23
 

 Аналог (замена) для AFN3406AS

   - подбор ⓘ MOSFET транзистора по параметрам

 

AFN3406AS Datasheet (PDF)

 ..1. Size:710K  alfa-mos
 afn3406as.pdf pdf_icon

AFN3406AS

AFN3406AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.4A,RDS(ON)=55m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 6.1. Size:710K  alfa-mos
 afn3406a.pdf pdf_icon

AFN3406AS

AFN3406A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/1.8A,RDS(ON)=58m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 7.1. Size:578K  alfa-mos
 afn3406.pdf pdf_icon

AFN3406AS

AFN3406 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 7.2. Size:578K  alfa-mos
 afn3406s.pdf pdf_icon

AFN3406AS

AFN3406S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

ПОКАЗАТЬ ЕЩЁ

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History: MPSP65M650 | CS9N90FA9D | CSBF30 | IPI80N08S2-07 | NCEP012N85LL | IXFV12N100P | MPSW65M046CFD

 

 
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