All MOSFET. IRLS610A Equivalents Search

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic Level Gate Drive RDS(on) = 1.5 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 2.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 1.185 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings ... See More ⇒

isc N-Channel MOSFET Transistor IRLS610A FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒

IRLS640A Advanced Power MOSFET FEATURES BVDSS = 200 V Logic-Level Gate Drive RDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9.8 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.145 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute M... See More ⇒

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic Level Gate Drive RDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9.8 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.145 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rati... See More ⇒

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic Level Gate Drive RDS(on) = 0.4 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 6.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.335 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratin... See More ⇒

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic Level Gate Drive RDS(on) = 0.8 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 4.1 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.609 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings ... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒