Справочник MOSFET. IRLS610A

 

IRLS610A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLS610A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 19 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 6.1 nC
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 35 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для IRLS610A

 

 

IRLS610A Datasheet (PDF)

 ..1. Size:788K  samsung
irls610a.pdf

IRLS610A
IRLS610A

Advanced Power MOSFETFEATURESBVDSS = 200 V Logic Level Gate DriveRDS(on) = 1.5 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 2.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 1.185 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings

 ..2. Size:254K  inchange semiconductor
irls610a.pdf

IRLS610A
IRLS610A

isc N-Channel MOSFET Transistor IRLS610AFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 9.1. Size:258K  fairchild semi
irls640a.pdf

IRLS610A
IRLS610A

IRLS640AAdvanced Power MOSFETFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9.8 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.145 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute M

 9.2. Size:914K  samsung
irls640a.pdf

IRLS610A
IRLS610A

Advanced Power MOSFETFEATURESBVDSS = 200 V Logic Level Gate DriveRDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9.8 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.145 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rati

 9.3. Size:920K  samsung
irls630a.pdf

IRLS610A
IRLS610A

Advanced Power MOSFETFEATURESBVDSS = 200 V Logic Level Gate DriveRDS(on) = 0.4 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 6.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.335 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratin

 9.4. Size:923K  samsung
irls620a.pdf

IRLS610A
IRLS610A

Advanced Power MOSFETFEATURESBVDSS = 200 V Logic Level Gate DriveRDS(on) = 0.8 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 4.1 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.609 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings

 9.5. Size:704K  onsemi
irls640a.pdf

IRLS610A
IRLS610A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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