Справочник MOSFET. IRLR3410

 

IRLR3410 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLR3410
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 79 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 34(max) nC
   trⓘ - Время нарастания: 53 ns
   Cossⓘ - Выходная емкость: 160 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.105 Ohm
   Тип корпуса: TO252

 Аналог (замена) для IRLR3410

 

 

IRLR3410 Datasheet (PDF)

 ..1. Size:158K  international rectifier
 irlr3410.pdf

IRLR3410 IRLR3410

PD - 91607BIRLR/U3410HEXFET Power MOSFET Logic Level Gate DriveD Ultra Low On-ResistanceVDSS = 100V Surface Mount (IRLR3410) Straight Lead (IRLU3410)RDS(on) = 0.105 Advanced Process TechnologyG Fast SwitchingID = 17A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve the

 ..2. Size:285K  international rectifier
 irlu3410pbf irlr3410pbf.pdf

IRLR3410 IRLR3410

PD - 95087AIRLR/U3410PbFl Logic Level Gate DriveHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRLR3410)Dl Straight Lead (IRLU3410) VDSS = 100Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.105Gl Fully Avalanche Ratedl Lead-FreeID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tec

 ..3. Size:285K  infineon
 irlr3410pbf irlu3410pbf.pdf

IRLR3410 IRLR3410

PD - 95087AIRLR/U3410PbFl Logic Level Gate DriveHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRLR3410)Dl Straight Lead (IRLU3410) VDSS = 100Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.105Gl Fully Avalanche Ratedl Lead-FreeID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tec

 ..4. Size:241K  inchange semiconductor
 irlr3410.pdf

IRLR3410 IRLR3410

isc N-Channel MOSFET Transistor IRLR3410, IIRLR3410FEATURESStatic drain-source on-resistance:RDS(on)105mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat

 0.1. Size:246K  international rectifier
 auirlr3410trl.pdf

IRLR3410 IRLR3410

PD - 97491AUTOMOTIVE GRADEAUIRLR3410Features Advanced Planar TechnologyHEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating DV(BR)DSS100V 175C Operating Temperature Fast SwitchingRDS(on) max.105mG Fully Avalanche Rated Repetitive Avalanche Allowed up toID17ASTjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifica

 0.2. Size:555K  infineon
 auirlr3410.pdf

IRLR3410 IRLR3410

AUTOMOTIVE GRADE AUIRLR3410 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 100V Logic Level Gate Drive Dynamic dV/dT Rating RDS(on) max. 105m 175C Operating Temperature Fast Switching ID 17A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D

 0.3. Size:863K  cn vbsemi
 irlr3410tr.pdf

IRLR3410 IRLR3410

IRLR3410TRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

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