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IRLR3410 Spec and Replacement


   Type Designator: IRLR3410
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TO252

 IRLR3410 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLR3410 Specs

 ..1. Size:285K  international rectifier
irlr3410pbf irlu3410pbf.pdf pdf_icon

IRLR3410

PD - 95087A IRLR/U3410PbF l Logic Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance l Surface Mount (IRLR3410) D l Straight Lead (IRLU3410) VDSS = 100V l Advanced Process Technology l Fast Switching RDS(on) = 0.105 G l Fully Avalanche Rated l Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec... See More ⇒

 ..2. Size:158K  international rectifier
irlr3410.pdf pdf_icon

IRLR3410

PD - 91607B IRLR/U3410 HEXFET Power MOSFET Logic Level Gate Drive D Ultra Low On-Resistance VDSS = 100V Surface Mount (IRLR3410) Straight Lead (IRLU3410) RDS(on) = 0.105 Advanced Process Technology G Fast Switching ID = 17A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the... See More ⇒

 ..3. Size:285K  international rectifier
irlu3410pbf irlr3410pbf.pdf pdf_icon

IRLR3410

PD - 95087A IRLR/U3410PbF l Logic Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance l Surface Mount (IRLR3410) D l Straight Lead (IRLU3410) VDSS = 100V l Advanced Process Technology l Fast Switching RDS(on) = 0.105 G l Fully Avalanche Rated l Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec... See More ⇒

 ..4. Size:241K  inchange semiconductor
irlr3410.pdf pdf_icon

IRLR3410

isc N-Channel MOSFET Transistor IRLR3410, IIRLR3410 FEATURES Static drain-source on-resistance RDS(on) 105m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gat... See More ⇒

Detailed specifications: IRLR210A , IRLR220A , IRLR230A , IRLR2703 , IRLR2705 , IRLR2905 , IRLR3103 , IRLR3303 , IRF2807 , IRLS510A , IRLS520A , IRLS530A , IRLS540A , IRLS610A , IRLS620A , IRLS630A , IRLS640A .

History: ZVN4310ASTZ | ZVN4210ASTZ

Keywords - IRLR3410 MOSFET specs

 IRLR3410 cross reference
 IRLR3410 equivalent finder
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