IRLR3410 Todos los transistores

 ..1. Size:285K  international rectifier
 irlr3410pbf irlu3410pbf.pdf

PD - 95087A IRLR/U3410PbF l Logic Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance l Surface Mount (IRLR3410) D l Straight Lead (IRLU3410) VDSS = 100V l Advanced Process Technology l Fast Switching RDS(on) = 0.105 G l Fully Avalanche Rated l Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

 ..2. Size:158K  international rectifier
 irlr3410.pdf

PD - 91607B IRLR/U3410 HEXFET Power MOSFET Logic Level Gate Drive D Ultra Low On-Resistance VDSS = 100V Surface Mount (IRLR3410) Straight Lead (IRLU3410) RDS(on) = 0.105 Advanced Process Technology G Fast Switching ID = 17A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the

 ..3. Size:285K  international rectifier
 irlu3410pbf irlr3410pbf.pdf

PD - 95087A IRLR/U3410PbF l Logic Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance l Surface Mount (IRLR3410) D l Straight Lead (IRLU3410) VDSS = 100V l Advanced Process Technology l Fast Switching RDS(on) = 0.105 G l Fully Avalanche Rated l Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

 ..4. Size:241K  inchange semiconductor
 irlr3410.pdf

isc N-Channel MOSFET Transistor IRLR3410, IIRLR3410 FEATURES Static drain-source on-resistance RDS(on) 105m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gat

 0.1. Size:246K  international rectifier
 auirlr3410trl.pdf

PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS 100V 175 C Operating Temperature Fast Switching RDS(on) max. 105m G Fully Avalanche Rated Repetitive Avalanche Allowed up to ID 17A S Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifica

 0.2. Size:555K  infineon
 auirlr3410.pdf

AUTOMOTIVE GRADE AUIRLR3410 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 100V Logic Level Gate Drive Dynamic dV/dT Rating RDS(on) max. 105m 175 C Operating Temperature Fast Switching ID 17A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D

 0.3. Size:863K  cn vbsemi
 irlr3410tr.pdf

IRLR3410TR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING