Справочник MOSFET. AO3401

 

AO3401 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AO3401
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 1.4 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 1.3 V
   Максимально допустимый постоянный ток стока |Id|: 4.2 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 3.2 ns
   Выходная емкость (Cd): 115 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.064 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для AO3401

 

 

AO3401 Datasheet (PDF)

 ..1. Size:1439K  htsemi
ao3401.pdf

AO3401
AO3401

AO340130V P-Channel Enhancement Mode MOSFETV = -30V DSR , V DS(ON) gs@-10V, Ids@-4.2A

 ..2. Size:1540K  lge
ao3401.pdf

AO3401
AO3401

AO3401P-Channel 30V(D-S) MOSFETDESCRIPTION DThe AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ)

 ..3. Size:497K  aosemi
ao3401.pdf

AO3401
AO3401

AO340130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3401 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -4.0Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

 ..4. Size:1476K  shenzhen
ao3401.pdf

AO3401
AO3401

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3401AO3401P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3401 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), low gate charge and ID = -4.0 A (VGS = -10V)operation with gate voltages as low as 2.5V. This RDS(ON)

 ..5. Size:771K  blue-rocket-elect
ao3401.pdf

AO3401
AO3401

AO3401 Rev.A Aug.-2016 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON)

 ..6. Size:1535K  kexin
ao3401 ko3401.pdf

AO3401
AO3401

SMD Type MOSFETP-Channel Enhancement MOSFET AO3401 (KO3401)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.1 Features3 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V)1 2+0.1 RDS(ON) 65m (VGS =-4.5V) +0.050.95 -0.1 0.1 -0.01D+0.11.9 -0.1 RDS(ON) 120m (VGS =-2.5V)1. GateG2. SourceS3. Drain Absolute M

 ..7. Size:1535K  kexin
ao3401.pdf

AO3401
AO3401

SMD Type MOSFETP-Channel Enhancement MOSFET AO3401 (KO3401)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.1 Features3 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V)1 2+0.1 RDS(ON) 65m (VGS =-4.5V) +0.050.95 -0.1 0.1 -0.01D+0.11.9 -0.1 RDS(ON) 120m (VGS =-2.5V)1. GateG2. SourceS3. Drain Absolute M

 ..8. Size:627K  guangdong hottech
ao3401.pdf

AO3401
AO3401

Plastic-Encapsulate MosfetsAO3401P-Channel MOSFETFEATURESHigh dense cell design for extremely low RDS(ON).Exceptional on-resistance and maximum DC current capabilityD 1.Gate2.SourceSOT-233.DrainG S MARKING:A19TMaximum ratings ( Ta=25 unless otherwise noted) UnitParameter Symbol Value Drain-Source Voltage VDS -30 VGate-Source Voltage VGS 12 VContinuous

 ..9. Size:1887K  mdd
ao3401.pdf

AO3401
AO3401

AO3401 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V P-Channel MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 44m@-10V 1. GATE -4.2A -30V 2. SOURCE 51m@4.5V 1 3. DRAIN 2 FEATURE APPLICATION Load/Power Switching High dense cell design for extremely low RDS(ON) Interfacing SwitchingExceptional on-resistance and maximum DC current capabilityMARKING Equivalen

 ..10. Size:1425K  cn puolop
ao3401.pdf

AO3401
AO3401

AO3401 -30V P-Channel Enhancement Mode MOSFETV = -30V DSR , V DS(ON) gs@-10V, Ids@-4.2A

 ..11. Size:453K  cn shikues
ao3401.pdf

AO3401
AO3401

P-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Feature SC-59 -30V/-4.2A, RDS(ON) =55m(MAX) @VGS = -10V. = RDS(ON) = 70m(MAX) @VGS = -4.5V. GS RDS(ON) =120m(MAX) @VGS = -2.5V. GSSuper High dense cell design for extremely low RSuper High dense cell design for extremely low RDS(ON) Reliable and Rugged SC-59 for Surface Mount Package Applications

 ..12. Size:1599K  cn yongyutai
ao3401.pdf

AO3401
AO3401

AO3401P-Channel 20-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-23-3L90 m@-4.5V-20VA-3110 m@-2.5V1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET zz Load Switch for Portable Devices z DC/DC Converter MARKING : A19T Equivalent Circuit Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source V

 ..13. Size:947K  cn twgmc
ao3401.pdf

AO3401
AO3401

SI2305AO3401AO3401AO3401SOT-23 Plastic-Encapsulate MOSFETS FEATURES

 ..14. Size:867K  cn vbsemi
ao3401.pdf

AO3401
AO3401

AO3401www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

 0.1. Size:231K  aosemi
ao3401a.pdf

AO3401
AO3401

AO3401A30V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3401A uses advanced trench technology toprovide excellent RDS(ON) , low gate charge and operation ID (at VGS=-10V) -4.0Agate voltages as low as 2.5V. This device is suitable for RDS(ON) (at VGS=-10V)

 0.2. Size:1580K  kexin
ao3401hf.pdf

AO3401
AO3401

SMD Type MOSFETP-Channel Enhancement MOSFETAO3401 HF (KO3401 HF)SOT-23-3Unit: mm+0.22.9 -0.1 Features+0.10.4-0.1 VDS (V) =-30V 3 ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) RDS(ON) 65m (VGS =-4.5V) 1 2D+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 120m (VGS =-2.5V)+0.11.9 -0.2G1. GateS2. Source3. Drain A

 0.3. Size:1562K  kexin
ao3401-3.pdf

AO3401
AO3401

SMD Type MOSFETP-Channel Enhancement MOSFET AO3401 (KO3401)SOT-23-3Unit: mm+0.22.9 -0.1 Features+0.10.4-0.1 VDS (V) =-30V 3 ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) RDS(ON) 65m (VGS =-4.5V) 1 2D+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 120m (VGS =-2.5V)+0.11.9 -0.2G1. GateS2. Source3. Drain Absolu

 0.4. Size:1315K  kexin
ao3401a.pdf

AO3401
AO3401

SMD Type MOSFETP-Channel MOSFETAO3401A (KO3401A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 VDS (V) =-30V ID =-4 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) 1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 60m (VGS =-4.5V)+0.11.9-0.1 RDS(ON) 85m (VGS =-2.5V)1. Gate2. SourceD3. DrainGS Absolute Maximum Ratings T

 0.5. Size:1320K  kexin
ao3401a-3.pdf

AO3401
AO3401

SMD Type MOSFETP-Channel MOSFETAO3401A (KO3401A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) =-30V ID =-4 A (VGS =-10V)1 2 RDS(ON) 50m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 60m (VGS =-4.5V)1.9 -0.2 RDS(ON) 85m (VGS =-2.5V)1. Gate2. SourceD3. DrainGS Absolute Maximum R

 0.6. Size:3338K  umw-ic
ao3401a.pdf

AO3401
AO3401

RUMWpeUMW AO3401AUMW AO3401AM SFETSMD TyP-Channel Enhancement MOSFETSOT23 Features VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 55m (VGS =-10V) RDS(ON) 70m (VGS =-4.5V) RDS(ON) 120m (VGS =-2.5V)1. GATE 2. SOURCE 3. DRAIN DGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage V

 0.7. Size:1984K  born
ao3401a.pdf

AO3401
AO3401

AO3401AMOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max Unit-30Drain-Source Voltage BV VDSSGate- Source VoltageV VGS +12Drain Current (continuous)I -4.2 ADDrain Current (pulsed) I ADM-18Total Device D

 0.8. Size:468K  huashuo
ao3401a.pdf

AO3401
AO3401

AO3401A P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The AO3401A is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON RDS(ON),typ 54 m and efficiency for most of the small power switching and load switch applications. ID -4.2 A The AO3401A meet the RoHS and Green Product requirement with full function reliability approv

 0.9. Size:573K  msksemi
ao3401mi-ms.pdf

AO3401
AO3401

www.msksemi.comAO3401MI-MSSemiconductor CompianceFEATURESOT-23-33 High dense cell design for extremely low R .DS(ON) Exceptional on-resistance and maximum DC currentcapability1. GATE 12APPLICATION2. SOURCE Load/Power Switching3. DRAIN Interfacing SwitchingEquivalent CircuitIV(BR)DSS RDS(on)MAX D65m@-10V75m@-4.5V-30 V-4.2A90m@-2.5V

 0.10. Size:866K  cn vbsemi
ao3401a.pdf

AO3401
AO3401

AO3401Awww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

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