AO3401 Todos los transistores

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AO3401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO3401

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.4 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 12 V

Tensión umbral compuerta-fuente Vgs(th): 1.3 V

Corriente continua de drenaje (Id): 4.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 3.2 nS

Conductancia de drenaje-sustrato (Cd): 115 pF

Resistencia drenaje-fuente RDS(on): 0.064 Ohm

Empaquetado / Estuche: SOT23

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AO3401 Datasheet (PDF)

1.1. ao3401.pdf Size:1439K _htsemi

AO3401
AO3401

AO3401 30V P-Channel Enhancement Mode MOSFET V = -30V DS R , V ? DS(ON) gs@-10V, I ds@-4.2A < 64m R , V DS(ON) gs@-4.5V, I ds@-4.0A < 75m ? R , V DS(ON) gs@-2.5V, I ds@-1.0A < 120m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L G S Millimeter Millimeter REF. REF. Min. Max. Min.

1.2. ao3401.pdf Size:497K _aosemi

AO3401
AO3401

AO3401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -4.0A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V) < 50mΩ a load switch or in PWM applications. RDS(ON) (at VGS =-4.5V) < 60mΩ RDS(ON) (a

1.3. ao3401hf.pdf Size:1580K _kexin

AO3401
AO3401

SMD Type MOSFET P-Channel Enhancement MOSFET AO3401 HF (KO3401 HF) SOT-23-3 Unit: mm +0.2 2.9 -0.1 ■ Features +0.1 0.4-0.1 ● VDS (V) =-30V 3 ● ID =-4.2 A (VGS =-10V) ● RDS(ON) < 50mΩ (VGS =-10V) ● RDS(ON) < 65mΩ (VGS =-4.5V) 1 2 D +0.02 +0.1 0.15 -0.02 0.95 -0.1 ● RDS(ON) < 120mΩ (VGS =-2.5V) +0.1 1.9 -0.2 G 1. Gate S 2. Source 3. Drain ■ A

1.4. ao3401.pdf Size:1535K _kexin

AO3401
AO3401

SMD Type MOSFET P-Channel Enhancement MOSFET AO3401 (KO3401) SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 ■ Features 3 ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON) < 50mΩ (VGS =-10V) 1 2 +0.1 ● RDS(ON) < 65mΩ (VGS =-4.5V) +0.05 0.95 -0.1 0.1 -0.01 D +0.1 1.9 -0.1 ● RDS(ON) < 120mΩ (VGS =-2.5V) 1. Gate G 2. Source S 3. Drain ■ Absolute M

1.5. ao3401a-3.pdf Size:1320K _kexin

AO3401
AO3401

SMD Type MOSFET P-Channel MOSFET AO3401A (KO3401A) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) 1 2 ● RDS(ON) < 50mΩ (VGS =-10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 ● RDS(ON) < 60mΩ (VGS =-4.5V) 1.9 -0.2 ● RDS(ON) < 85mΩ (VGS =-2.5V) 1. Gate 2. Source D 3. Drain G S ■ Absolute Maximum R

1.6. ao3401a.pdf Size:1315K _kexin

AO3401
AO3401

SMD Type MOSFET P-Channel MOSFET AO3401A (KO3401A) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON) < 50mΩ (VGS =-10V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 ● RDS(ON) < 60mΩ (VGS =-4.5V) +0.1 1.9-0.1 ● RDS(ON) < 85mΩ (VGS =-2.5V) 1. Gate 2. Source D 3. Drain G S ■ Absolute Maximum Ratings T

1.7. ao3401-3.pdf Size:1562K _kexin

AO3401
AO3401

SMD Type MOSFET P-Channel Enhancement MOSFET AO3401 (KO3401) SOT-23-3 Unit: mm +0.2 2.9 -0.1 ■ Features +0.1 0.4-0.1 ● VDS (V) =-30V 3 ● ID =-4.2 A (VGS =-10V) ● RDS(ON) < 50mΩ (VGS =-10V) ● RDS(ON) < 65mΩ (VGS =-4.5V) 1 2 D +0.02 +0.1 0.15 -0.02 0.95 -0.1 ● RDS(ON) < 120mΩ (VGS =-2.5V) +0.1 1.9 -0.2 G 1. Gate S 2. Source 3. Drain ■ Absolu

1.8. ao3401.pdf Size:1476K _shenzhen-tuofeng-semi

AO3401
AO3401

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3401 AO3401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3401 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON), low gate charge and ID = -4.0 A (VGS = -10V) operation with gate voltages as low as 2.5V. This RDS(ON) < 60mΩ (VGS = -10V) device is suitable for use

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