AO3401 MOSFET. Datasheet pdf. Equivalent

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AO3401 Datasheet (PDF)

0.1. ao3401.pdf Size:1439K _htsemi

AO3401 30V P-Channel Enhancement Mode MOSFET V = -30V DS R , V Ω DS(ON) gs@-10V, I ds@-4.2A < 64m R , V DS(ON) gs@-4.5V, I ds@-4.0A < 75m Ω R , V DS(ON) gs@-2.5V, I ds@-1.0A < 120mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L G S Millimeter Millimeter REF. REF. Min. M

0.2. ao3401.pdf Size:497K _aosemi

AO3401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -4.0A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V) < 50mΩ a load switch or in PWM applications. RDS(ON) (at VGS =-4.5V) < 60mΩ RDS(ON) (a

 0.3. ao3401.pdf Size:1476K _shenzhen

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3401 AO3401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3401 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON), low gate charge and ID = -4.0 A (VGS = -10V) operation with gate voltages as low as 2.5V. This RDS(ON) < 60mΩ (VGS = -10V) device is suitable for use

0.4. ao3401a-3.pdf Size:1320K _kexin

SMD Type MOSFET P-Channel MOSFET AO3401A (KO3401A) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) 1 2 ● RDS(ON) ＜ 50mΩ (VGS =-10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 ● RDS(ON) ＜ 60mΩ (VGS =-4.5V) 1.9 -0.2 ● RDS(ON) ＜ 85mΩ (VGS =-2.5V) 1. Gate 2. Source D 3. Drain G S ■ Absolute Maximum R

 0.5. ao3401hf.pdf Size:1580K _kexin

SMD Type MOSFET P-Channel Enhancement MOSFET AO3401 HF (KO3401 HF) SOT-23-3 Unit: mm +0.2 2.9 -0.1 ■ Features +0.1 0.4-0.1 ● VDS (V) =-30V 3 ● ID =-4.2 A (VGS =-10V) ● RDS(ON) ＜ 50mΩ (VGS =-10V) ● RDS(ON) ＜ 65mΩ (VGS =-4.5V) 1 2 D +0.02 +0.1 0.15 -0.02 0.95 -0.1 ● RDS(ON) ＜ 120mΩ (VGS =-2.5V) +0.1 1.9 -0.2 G 1. Gate S 2. Source 3. Drain ■ A

0.6. ao3401.pdf Size:1535K _kexin

SMD Type MOSFET P-Channel Enhancement MOSFET AO3401 (KO3401) SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 ■ Features 3 ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON) ＜ 50mΩ (VGS =-10V) 1 2 +0.1 ● RDS(ON) ＜ 65mΩ (VGS =-4.5V) +0.05 0.95 -0.1 0.1 -0.01 D +0.1 1.9 -0.1 ● RDS(ON) ＜ 120mΩ (VGS =-2.5V) 1. Gate G 2. Source S 3. Drain ■ Absolute M

0.7. ao3401a.pdf Size:1315K _kexin

SMD Type MOSFET P-Channel MOSFET AO3401A (KO3401A) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON) ＜ 50mΩ (VGS =-10V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 ● RDS(ON) ＜ 60mΩ (VGS =-4.5V) +0.1 1.9-0.1 ● RDS(ON) ＜ 85mΩ (VGS =-2.5V) 1. Gate 2. Source D 3. Drain G S ■ Absolute Maximum Ratings T

0.8. ao3401-3.pdf Size:1562K _kexin

SMD Type MOSFET P-Channel Enhancement MOSFET AO3401 (KO3401) SOT-23-3 Unit: mm +0.2 2.9 -0.1 ■ Features +0.1 0.4-0.1 ● VDS (V) =-30V 3 ● ID =-4.2 A (VGS =-10V) ● RDS(ON) ＜ 50mΩ (VGS =-10V) ● RDS(ON) ＜ 65mΩ (VGS =-4.5V) 1 2 D +0.02 +0.1 0.15 -0.02 0.95 -0.1 ● RDS(ON) ＜ 120mΩ (VGS =-2.5V) +0.1 1.9 -0.2 G 1. Gate S 2. Source 3. Drain ■ Absolu

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