AO3401 Specs and Replacement
The AO3401 is a compact, surface-mount P-channel MOSFET designed for low-voltage switching and power-management applications. Built on advanced trench MOSFET technology, it offers low on-resistance, enabling efficient load control with minimal conduction losses. Its drain-source voltage rating is 30V, making it suitable for battery-powered devices, DC-DC converters, high-side switching. The SOT23 package provides a small footprint while maintaining good thermal performance, supporting continuous drain currents up to approximately 4.2A under proper cooling conditions. Fast switching characteristics allow integration in high-frequency circuits with reduced gate charge, improving overall system efficiency. The AO3401's combination of low Rds(on), stable switching, compact size makes it a reliable choice for portable electronics and power-distribution modules.
Type Designator: AO3401
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.2 nS
Cossⓘ -
Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
Package: SOT23
- MOSFET ⓘ Cross-Reference Search
AO3401 datasheet
..1. Size:1439K htsemi
ao3401.pdf 
AO3401 30V P-Channel Enhancement Mode MOSFET V = -30V DS R , V DS(ON) gs@-10V, I ds@-4.2A ... See More ⇒
..2. Size:1540K lge
ao3401.pdf
AO3401 P-Channel 30V(D-S) MOSFET DESCRIPTION D The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ) ... See More ⇒
..3. Size:497K aosemi
ao3401.pdf
AO3401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -4.0A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V) ... See More ⇒
..4. Size:1476K shenzhen
ao3401.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3401 AO3401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3401 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON), low gate charge and ID = -4.0 A (VGS = -10V) operation with gate voltages as low as 2.5V. This RDS(ON) ... See More ⇒
..5. Size:771K blue-rocket-elect
ao3401.pdf
AO3401 Rev.A Aug.-2016 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON) ... See More ⇒
..6. Size:1535K kexin
ao3401 ko3401.pdf
SMD Type MOSFET P-Channel Enhancement MOSFET AO3401 (KO3401) SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) 1 2 +0.1 RDS(ON) 65m (VGS =-4.5V) +0.05 0.95 -0.1 0.1 -0.01 D +0.1 1.9 -0.1 RDS(ON) 120m (VGS =-2.5V) 1. Gate G 2. Source S 3. Drain Absolute M... See More ⇒
..7. Size:1535K kexin
ao3401.pdf
SMD Type MOSFET P-Channel Enhancement MOSFET AO3401 (KO3401) SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) 1 2 +0.1 RDS(ON) 65m (VGS =-4.5V) +0.05 0.95 -0.1 0.1 -0.01 D +0.1 1.9 -0.1 RDS(ON) 120m (VGS =-2.5V) 1. Gate G 2. Source S 3. Drain Absolute M... See More ⇒
..8. Size:627K guangdong hottech
ao3401.pdf
Plastic-Encapsulate Mosfets AO3401 P-Channel MOSFET FEATURES High dense cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability D 1.Gate 2.Source SOT-23 3.Drain G S MARKING A19T Maximum ratings ( Ta=25 unless otherwise noted) Unit Parameter Symbol Value Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 12 V Continuous ... See More ⇒
..9. Size:1887K mdd
ao3401.pdf
AO3401 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V P-Channel MOSFET 3 ID Max V(BR)DSS RDS(on)Typ 44m @-10V 1. GATE -4.2A -30V 2. SOURCE 51m @4.5V 1 3. DRAIN 2 FEATURE APPLICATION Load/Power Switching High dense cell design for extremely low RDS(ON) Interfacing Switching Exceptional on-resistance and maximum DC current capability MARKING Equivalen... See More ⇒
..10. Size:1425K cn puolop
ao3401.pdf
AO3401 -30V P-Channel Enhancement Mode MOSFET V = -30V DS R , V DS(ON) gs@-10V, I ds@-4.2A ... See More ⇒
..11. Size:453K cn shikues
ao3401.pdf
P-Channel Enhancement Mode MOSFET Channel Enhancement Mode MOSFET Feature SC-59 -30V/-4.2A, RDS(ON) =55m (MAX) @VGS = -10V. = RDS(ON) = 70m (MAX) @VGS = -4.5V. GS RDS(ON) =120m (MAX) @VGS = -2.5V. GS Super High dense cell design for extremely low R Super High dense cell design for extremely low RDS(ON) Reliable and Rugged SC-59 for Surface Mount Package Applications ... See More ⇒
..12. Size:1599K cn yongyutai
ao3401.pdf
AO3401 P-Channel 20-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-23-3L 90 m @-4.5V -20V A -3 110 m @-2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET z z Load Switch for Portable Devices z DC/DC Converter MARKING A19T Equivalent Circuit Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source V... See More ⇒
..13. Size:1377K cn alj
ao3401.pdf
SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. SOT-23 Plastic-Encapsulate MOSFETS AO3401 P-Channel Enhancement Mode Field Effect Transistor Features V (V) = -30V DS = -4.2 A (V = -10V) ID GS R ... See More ⇒
..14. Size:947K cn twgmc
ao3401.pdf
SI2305 AO3401 AO3401 AO3401 SOT-23 Plastic-Encapsulate MOSFETS FEATURES ... See More ⇒
..15. Size:867K cn vbsemi
ao3401.pdf
AO3401 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23) ... See More ⇒
0.1. Size:231K aosemi
ao3401a.pdf
AO3401A 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation ID (at VGS=-10V) -4.0A gate voltages as low as 2.5V. This device is suitable for RDS(ON) (at VGS=-10V) ... See More ⇒
0.2. Size:1580K kexin
ao3401hf.pdf
SMD Type MOSFET P-Channel Enhancement MOSFET AO3401 HF (KO3401 HF) SOT-23-3 Unit mm +0.2 2.9 -0.1 Features +0.1 0.4-0.1 VDS (V) =-30V 3 ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) RDS(ON) 65m (VGS =-4.5V) 1 2 D +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 120m (VGS =-2.5V) +0.1 1.9 -0.2 G 1. Gate S 2. Source 3. Drain A... See More ⇒
0.3. Size:1562K kexin
ao3401-3.pdf
SMD Type MOSFET P-Channel Enhancement MOSFET AO3401 (KO3401) SOT-23-3 Unit mm +0.2 2.9 -0.1 Features +0.1 0.4-0.1 VDS (V) =-30V 3 ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) RDS(ON) 65m (VGS =-4.5V) 1 2 D +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 120m (VGS =-2.5V) +0.1 1.9 -0.2 G 1. Gate S 2. Source 3. Drain Absolu... See More ⇒
0.4. Size:1315K kexin
ao3401a.pdf
SMD Type MOSFET P-Channel MOSFET AO3401A (KO3401A) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-30V ID =-4 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 60m (VGS =-4.5V) +0.1 1.9-0.1 RDS(ON) 85m (VGS =-2.5V) 1. Gate 2. Source D 3. Drain G S Absolute Maximum Ratings T... See More ⇒
0.5. Size:1320K kexin
ao3401a-3.pdf
SMD Type MOSFET P-Channel MOSFET AO3401A (KO3401A) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) =-30V ID =-4 A (VGS =-10V) 1 2 RDS(ON) 50m (VGS =-10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 RDS(ON) 60m (VGS =-4.5V) 1.9 -0.2 RDS(ON) 85m (VGS =-2.5V) 1. Gate 2. Source D 3. Drain G S Absolute Maximum R... See More ⇒
0.6. Size:3338K umw-ic
ao3401a.pdf
R UMWpe UMW AO3401A UMW AO3401A M SFET SMD Ty P-Channel Enhancement MOSFET SOT 23 Features VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 55m (VGS =-10V) RDS(ON) 70m (VGS =-4.5V) RDS(ON) 120m (VGS =-2.5V) 1. GATE 2. SOURCE 3. DRAIN D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage V... See More ⇒
0.7. Size:1984K born
ao3401a.pdf
AO3401A MOSFET ROHS P-Channel Enhancement-Mode MOSFET SOT-23 - Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance MAXIMUM RANTINGS Characteristic Symbol Max Unit -30 Drain-Source Voltage BV V DSS Gate- Source Voltage V V GS +12 Drain Current (continuous) I -4.2 A D Drain Current (pulsed) I A DM -18 Total Device D... See More ⇒
0.8. Size:468K huashuo
ao3401a.pdf
AO3401A P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The AO3401A is the high cell density trenched P- ch MOSFETs, which provides excellent RDSON RDS(ON),typ 54 m and efficiency for most of the small power switching and load switch applications. ID -4.2 A The AO3401A meet the RoHS and Green Product requirement with full function reliability approv... See More ⇒
0.9. Size:573K msksemi
ao3401mi-ms.pdf
www.msksemi.com AO3401MI-MS Semiconductor Compiance FEATURE SOT-23-3 3 High dense cell design for extremely low R . DS(ON) Exceptional on-resistance and maximum DC currentcapability 1. GATE 1 2 APPLICATION 2. SOURCE Load/Power Switching 3. DRAIN Interfacing Switching Equivalent Circuit I V(BR)DSS RDS(on)MAX D 65m @-10V 75m @-4.5V -30 V -4.2A 90m @-2.5V... See More ⇒
0.10. Size:866K cn vbsemi
ao3401a.pdf
AO3401A www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23)... See More ⇒
0.11. Size:967K cn minos
ao3401s.pdf
Description The AO3401S combines advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a load switch or other general applications. Features VDS= -30V, ID= -4.2A Schematic Diagram RDS(ON)typ. =45m @VDS=-10V RDS(ON)typ. =51m @VDS=-4.5V RDS(ON)typ. =65m @VDS=-2.5V Low gate ... See More ⇒
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Keywords - AO3401 MOSFET specs
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AO3401 equivalent finder
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AO3401 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
