All MOSFET. AO3401 Datasheet

 

AO3401 Datasheet and Replacement


   Type Designator: AO3401
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: SOT23
 
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AO3401 Datasheet (PDF)

 ..1. Size:1439K  htsemi
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AO3401

AO340130V P-Channel Enhancement Mode MOSFETV = -30V DSR , V DS(ON) gs@-10V, Ids@-4.2A

 ..2. Size:1540K  lge
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AO3401

AO3401P-Channel 30V(D-S) MOSFETDESCRIPTION DThe AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ)

 ..3. Size:497K  aosemi
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AO3401

AO340130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3401 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -4.0Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

 ..4. Size:1476K  shenzhen
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AO3401

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3401AO3401P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3401 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), low gate charge and ID = -4.0 A (VGS = -10V)operation with gate voltages as low as 2.5V. This RDS(ON)

Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFB31N20D , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

History: 2SK1756

Keywords - AO3401 MOSFET datasheet

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