All MOSFET. SM103 Datasheet

 

SM103 Datasheet and Replacement


   Type Designator: SM103
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 0.015 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 770 Ohm
   Package: ELINE
 

 SM103 substitution

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SM103 Datasheet (PDF)

 ..1. Size:238K  gdr
 sm103 sm104.pdf pdf_icon

SM103

 0.1. Size:506K  globaltech semi
 gsm1032.pdf pdf_icon

SM103

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1032, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/0.5A,RDS(ON)=500m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low Low Offset (Error) Voltage voltage

 0.2. Size:565K  globaltech semi
 gsm1034.pdf pdf_icon

SM103

GSM1034 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1034, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m@VGS=4.5V MOSFET, uses Advanced Trench 30V/0.5A,RDS(ON)=500m@VGS=2.5V Technology to provide excellent RDS(ON), low 30V/0.4A,RDS(ON)=720m@VGS=1.8V gate charge. Low Offset (Error) Voltage These devices are particularly suited for low Low-

Datasheet: PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , AO3401 , AO3407 , PT4435 , IRF830 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 , U105D , 2N7002KDW , S2N7002 .

History: IRF830S

Keywords - SM103 MOSFET datasheet

 SM103 cross reference
 SM103 equivalent finder
 SM103 lookup
 SM103 substitution
 SM103 replacement

 

 
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