SM103 MOSFET Datasheet: N-Ch, 20V, 0.015A. Full specification with pinout and replacement list

SM103 Specs and Replacement

Type Designator: SM103

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 0.015 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 770 Ohm

Package: ELINE

SM103 substitution

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SM103 datasheet

..1. Size:238K gdr
sm103 sm104.pdf pdf_icon

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0.1. Size:506K globaltech semi
gsm1032.pdf pdf_icon

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1032, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/0.5A,RDS(ON)=500m @VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=750m @VGS=1.8V These devices are particularly suited for low Low Offset (Error) Voltage voltage ... See More ⇒

0.2. Size:565K globaltech semi
gsm1034.pdf pdf_icon

GSM1034 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM1034, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m @VGS=4.5V MOSFET, uses Advanced Trench 30V/0.5A,RDS(ON)=500m @VGS=2.5V Technology to provide excellent RDS(ON), low 30V/0.4A,RDS(ON)=720m @VGS=1.8V gate charge. Low Offset (Error) Voltage These devices are particularly suited for low Low-... See More ⇒

Detailed specifications: PT4410, PT9926, SI2301, SI2305, XP152A12COMR, AO3401, AO3407, PT4435, 2N60, SM104, SMY50, SMY51, SMY52, SMY60, U105D, 2N7002KDW, S2N7002