All MOSFET. PT8205 Datasheet

 

PT8205 MOSFET. Datasheet pdf. Equivalent

Type Designator: PT8205

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.4 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 4.8 nS

Drain-Source Capacitance (Cd): 155 pF

Maximum Drain-Source On-State Resistance (Rds): 0.046 Ohm

Package: SOT236

PT8205 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PT8205 Datasheet (PDF)

1.1. pt8205.pdf Size:2427K _htsemi

PT8205
PT8205

PT8205 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@2.5V, Ids@3.4A 46m? RDS(ON), Vgs@4.V, Ids@4.3A ? 30m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions SOT-163 Millimeter Millimeter REF. REF. Min. Ma

1.2. pt8205a.pdf Size:2146K _htsemi

PT8205
PT8205

PT8205A 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 38m? RDS(ON), Vgs@ 4.5V, Ids@ 6A = 28m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications 1 8 D1 D2 2 7 S1 S2 3 6 S1 S2 4 5 G1 G2 TSSOP-8 Millimete

 

Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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