PT8205 Datasheet. Specs and Replacement

Type Designator: PT8205  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: SOT236

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PT8205 datasheet

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PT8205

PT8205 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@2.5V, Ids@3.4A 46m RDS(ON), Vgs@4.V, Ids@4.3A 30m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions SOT-163 Millimeter Millimeter REF. REF. ... See More ⇒

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PT8205

PT8205 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 24m RDS(ON), Vgs @ 4.5V, Ids @ 6A = 20m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions SOT-163 (SOT-23-6L) Millimeter Millimet... See More ⇒

 0.1. Size:2146K  htsemi
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PT8205

PT8205A 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 38m RDS(ON), Vgs@ 4.5V, Ids@ 6A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications 1 8 D1 D2 2 7 S1 S2 3 6 S1 S2 4 5 G1 G2 TSSOP-8 Mi... See More ⇒

Detailed specifications: 2P7209A, 2P7234A, 2P7234A-5, SI2300, SI2302, SI2312, XP151A13COMR, AO3400, IRF2807, PT8205A, PT8822, PT4410, PT9926, SI2301, SI2305, XP152A12COMR, AO3401

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