All MOSFET. PT8822 Datasheet

 

PT8822 MOSFET. Datasheet pdf. Equivalent

Type Designator: PT8822

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 6 nS

Drain-Source Capacitance (Cd): 126 pF

Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm

Package: TSSOP8

PT8822 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PT8822 Datasheet (PDF)

1.1. pt8822.pdf Size:2155K _htsemi

PT8822 PT8822

PT8822 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@1.8V, Ids@2A = 50m? RDS(ON), Vgs@2.5V, Ids@5.5A = 32m? RDS(ON), Vgs@4.5V, Ids@6.6A = 24m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Ideal for Li ion battery pack applications Package Dimensions 1 8 D1 D2 2 7 S1 S2 3 6 S1 S2 4 5 G1 G2 Millimet

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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