All MOSFET. PT8822 Datasheet

 

PT8822 MOSFET. Datasheet pdf. Equivalent

Type Designator: PT8822

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 6 nS

Drain-Source Capacitance (Cd): 126 pF

Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm

Package: TSSOP8

PT8822 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PT8822 Datasheet (PDF)

1.1. pt8822.pdf Size:2155K _htsemi

PT8822 PT8822

PT8822 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@1.8V, Ids@2A = 50mΩ RDS(ON), Vgs@2.5V, Ids@5.5A = 32mΩ RDS(ON), Vgs@4.5V, Ids@6.6A = 24mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Ideal for Li ion battery pack applications Package Dimensions 1 8 D1 D2 2 7 S1 S2 3 6 S1 S2 4 5 G1 G2

Datasheet: 2P7234A-5 , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , IRF460 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , AO3401 , AO3407 , PT4435 .

 

 
Back to Top