PT8822 MOSFET. Datasheet pdf. Equivalent
Type Designator: PT8822
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 6 nS
Drain-Source Capacitance (Cd): 126 pF
Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm
Package: TSSOP8
PT8822 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PT8822 Datasheet (PDF)
1.1. pt8822.pdf 
Size:2155K _htsemi
PT8822 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@1.8V, Ids@2A = 50m? RDS(ON), Vgs@2.5V, Ids@5.5A = 32m? RDS(ON), Vgs@4.5V, Ids@6.6A = 24m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Ideal for Li ion battery pack applications Package Dimensions 1 8 D1 D2 2 7 S1 S2 3 6 S1 S2 4 5 G1 G2 Millimet
Datasheet: 2P7234A-5 , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , IRF460 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , AO3401 , AO3407 , PT4435 .
