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PT8822 Spec and Replacement


   Type Designator: PT8822
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TSSOP8
 

 PT8822 substitution

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PT8822 Specs

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PT8822

PT8822 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@1.8V, Ids@2A = 50m RDS(ON), Vgs@2.5V, Ids@5.5A = 32m RDS(ON), Vgs@4.5V, Ids@6.6A = 24m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Ideal for Li ion battery pack applications Package Dimensions 1 8 D1 D2 2 7 S1 S2 3 6 S1 S2 4 5 G1 G2 ... See More ⇒

Detailed specifications: 2P7234A-5 , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , RFP50N06 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , AO3401 , AO3407 , PT4435 .

Keywords - PT8822 MOSFET specs

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