XP152A12COMR MOSFET PDF: P-Ch, 20V, 2.2A. Datasheet. Full specification with pinout and replacement list

XP152A12COMR Specs and Replacement

   Type Designator: XP152A12COMR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT23

XP152A12COMR substitution

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XP152A12COMR datasheet

..1. Size:2336K htsemi
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XP152A12COMR 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A 130m RDS(ON), Vgs@-2.5V, Ids@-2.0A 190m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.0... See More ⇒

5.1. Size:644K shenzhen
xp152a12c0mr.pdf pdf_icon

Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-Channel Power MOS FET Applications Notebook PCs DMOS Structure Cellular and portable phones Low On-State Resistance 0.3 (max) On - board power supplies Ultra High-Speed Switching Li - ion battery systems Gate Protect Diode Built-in SOT -... See More ⇒

5.2. Size:97K tysemi
xp152a12c0mr-g.pdf pdf_icon

Product specification XP152A12C0MR-G Power MOSFET GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package mak... See More ⇒

5.3. Size:311K torex
xp152a12c0mr-g.pdf pdf_icon

XP152A12C0MR-G ETR1121_003 Power MOSFET GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high de... See More ⇒