All MOSFET. XP152A12COMR Datasheet

 

XP152A12COMR MOSFET. Datasheet pdf. Equivalent

Type Designator: XP152A12COMR

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 2.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 36 nS

Drain-Source Capacitance (Cd): 223 pF

Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm

Package: SOT23

XP152A12COMR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

XP152A12COMR Datasheet (PDF)

1.1. xp152a12c0mr-g.pdf Size:311K _update_mosfet

XP152A12COMR
XP152A12COMR

XP152A12C0MR-G ETR1121_003 Power MOSFET ■GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high de

1.2. xp152a12comr.pdf Size:2336K _htsemi

XP152A12COMR
XP152A12COMR

XP152A12COMR 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A 130m? RDS(ON), Vgs@-2.5V, Ids@-2.0A 190m ? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30

 1.3. xp152a12c0mr-g.pdf Size:97K _tysemi

XP152A12COMR
XP152A12COMR

Product specification XP152A12C0MR-G Power MOSFET ■GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package mak

1.4. xp152a12c0mr.pdf Size:644K _shenzhen-tuofeng-semi

XP152A12COMR
XP152A12COMR

Shenzhen Tuofeng Semiconductor Technology Co., Ltd ◆ ■ P-Channel Power MOS FET Applications ◆ ● Notebook PCs DMOS Structure ● Cellular and portable phones ◆ Low On-State Resistance : 0.3Ω (max) ◆ ● On - board power supplies Ultra High-Speed Switching ◆ ● Li - ion battery systems Gate Protect Diode Built-in ◆ SOT -

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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