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XP152A12COMR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: XP152A12COMR

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.25 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 2.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 36 nS

Conductancia de drenaje-sustrato (Cd): 223 pF

Resistencia drenaje-fuente RDS(on): 0.13 Ohm

Empaquetado / Estuche: SOT23

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XP152A12COMR Datasheet (PDF)

1.1. xp152a12c0mr-g.pdf Size:311K _update_mosfet

XP152A12COMR
XP152A12COMR

XP152A12C0MR-G ETR1121_003 Power MOSFET ■GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high de

1.2. xp152a12comr.pdf Size:2336K _htsemi

XP152A12COMR
XP152A12COMR

XP152A12COMR 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A 130m? RDS(ON), Vgs@-2.5V, Ids@-2.0A 190m ? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30

 1.3. xp152a12c0mr-g.pdf Size:97K _tysemi

XP152A12COMR
XP152A12COMR

Product specification XP152A12C0MR-G Power MOSFET ■GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package mak

1.4. xp152a12c0mr.pdf Size:644K _shenzhen-tuofeng-semi

XP152A12COMR
XP152A12COMR

Shenzhen Tuofeng Semiconductor Technology Co., Ltd ◆ ■ P-Channel Power MOS FET Applications ◆ ● Notebook PCs DMOS Structure ● Cellular and portable phones ◆ Low On-State Resistance : 0.3Ω (max) ◆ ● On - board power supplies Ultra High-Speed Switching ◆ ● Li - ion battery systems Gate Protect Diode Built-in ◆ SOT -

Otros transistores... AO3400 , PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , BUZ10 , AO3401 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 .

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