XP152A12COMR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: XP152A12COMR

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 2.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 223 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: SOT23

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XP152A12COMR datasheet

 ..1. Size:2336K  htsemi
 xp152a12comr.pdf pdf_icon

XP152A12COMR

XP152A12COMR 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A 130m RDS(ON), Vgs@-2.5V, Ids@-2.0A 190m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.0

 5.1. Size:644K  shenzhen
 xp152a12c0mr.pdf pdf_icon

XP152A12COMR

Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-Channel Power MOS FET Applications Notebook PCs DMOS Structure Cellular and portable phones Low On-State Resistance 0.3 (max) On - board power supplies Ultra High-Speed Switching Li - ion battery systems Gate Protect Diode Built-in SOT -

 5.2. Size:97K  tysemi
 xp152a12c0mr-g.pdf pdf_icon

XP152A12COMR

Product specification XP152A12C0MR-G Power MOSFET GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package mak

 5.3. Size:311K  torex
 xp152a12c0mr-g.pdf pdf_icon

XP152A12COMR

XP152A12C0MR-G ETR1121_003 Power MOSFET GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high de

MOSTRAR MÁS

Otros transistores... AO3400, PT8205, PT8205A, PT8822, PT4410, PT9926, SI2301, SI2305, IRF520, AO3401, AO3407, PT4435, SM103, SM104, SMY50, SMY51, SMY52