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XP152A12COMR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: XP152A12COMR

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 1.25 W

Предельно допустимое напряжение сток-исток (Uds): 20 V

Предельно допустимое напряжение затвор-исток (Ugs): 8 V

Максимально допустимый постоянный ток стока (Id): 2.2 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 36 ns

Выходная емкость (Cd): 223 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.13 Ohm

Тип корпуса: SOT23

Аналог (замена) для XP152A12COMR

 

XP152A12COMR Datasheet (PDF)

1.1. xp152a12c0mr-g.pdf Size:311K _update_mosfet

XP152A12COMR
XP152A12COMR

XP152A12C0MR-G ETR1121_003 Power MOSFET ■GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high de

1.2. xp152a12comr.pdf Size:2336K _htsemi

XP152A12COMR
XP152A12COMR

XP152A12COMR 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A 130m? RDS(ON), Vgs@-2.5V, Ids@-2.0A 190m ? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30

 1.3. xp152a12c0mr-g.pdf Size:97K _tysemi

XP152A12COMR
XP152A12COMR

Product specification XP152A12C0MR-G Power MOSFET ■GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package mak

1.4. xp152a12c0mr.pdf Size:644K _shenzhen-tuofeng-semi

XP152A12COMR
XP152A12COMR

Shenzhen Tuofeng Semiconductor Technology Co., Ltd ◆ ■ P-Channel Power MOS FET Applications ◆ ● Notebook PCs DMOS Structure ● Cellular and portable phones ◆ Low On-State Resistance : 0.3Ω (max) ◆ ● On - board power supplies Ultra High-Speed Switching ◆ ● Li - ion battery systems Gate Protect Diode Built-in ◆ SOT -

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |
 

 

 

 

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