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PT4410 Specs and Replacement

Type Designator: PT4410

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: SOP8

PT4410 substitution

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PT4410 datasheet

 ..1. Size:1554K  htsemi
 pt4410.pdf pdf_icon

PT4410

PT4410 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 10.5m RDS(ON), Vgs@4.5V, Ids@12A = 15m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Package Dimensions D D D D 8 7 6 5 1 2 3 4 S S S G Millimeter Millimeter... See More ⇒

Detailed specifications: SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 , SI2302 , PT9926 , SI2301 , SI2305 , XP152A12COMR , AO3401 , AO3407 , PT4435 , SM103 .

Keywords - PT4410 MOSFET specs

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