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PT9926 Spec and Replacement


   Type Designator: PT9926
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOP8

 PT9926 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PT9926 Specs

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PT9926

PT9926 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@2.5V, Ids@5.2A ... See More ⇒

 ..2. Size:158K  cn puolop
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PT9926

PT9926 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@2.5V, Ids@5.2A ... See More ⇒

 9.1. Size:323K  central
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PT9926

CMPT992 CMPT992P CMPT992F www.centralsemi.com CMPT992E DESCRIPTION SURFACE MOUNT PNP LOW NOISE The CENTRAL SEMICONDUCTOR CMPT992 types SILICON TRANSISTOR are PNP silicon low noise transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications where a high BVCEO is required. MARKING CODE SEE MAR... See More ⇒

 9.2. Size:323K  central
 cmpt992.pdf pdf_icon

PT9926

CMPT992 CMPT992P CMPT992F www.centralsemi.com CMPT992E DESCRIPTION SURFACE MOUNT PNP LOW NOISE The CENTRAL SEMICONDUCTOR CMPT992 types SILICON TRANSISTOR are PNP silicon low noise transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications where a high BVCEO is required. MARKING CODE SEE MAR... See More ⇒

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Detailed specifications: SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 , PT4410 , AO3407 , SI2301 , SI2305 , XP152A12COMR , AO3401 , AO3407 , PT4435 , SM103 , SM104 .

Keywords - PT9926 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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