All MOSFET. PT9926 Datasheet

 

PT9926 Datasheet and Replacement


   Type Designator: PT9926
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOP8
 

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PT9926 Datasheet (PDF)

 ..1. Size:2323K  htsemi
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PT9926

PT992620V Dual N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@2.5V, Ids@5.2A

 ..2. Size:158K  cn puolop
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PT9926

PT9926 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@2.5V, Ids@5.2A

 9.1. Size:323K  central
 cmpt992p.pdf pdf_icon

PT9926

CMPT992CMPT992PCMPT992Fwww.centralsemi.comCMPT992EDESCRIPTION:SURFACE MOUNT PNP LOW NOISEThe CENTRAL SEMICONDUCTOR CMPT992 types SILICON TRANSISTORare PNP silicon low noise transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications where a high BVCEO is required. MARKING CODE: SEE MAR

 9.2. Size:323K  central
 cmpt992.pdf pdf_icon

PT9926

CMPT992CMPT992PCMPT992Fwww.centralsemi.comCMPT992EDESCRIPTION:SURFACE MOUNT PNP LOW NOISEThe CENTRAL SEMICONDUCTOR CMPT992 types SILICON TRANSISTORare PNP silicon low noise transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications where a high BVCEO is required. MARKING CODE: SEE MAR

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Keywords - PT9926 MOSFET datasheet

 PT9926 cross reference
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