PT9926 Datasheet. Specs and Replacement

Type Designator: PT9926  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOP8

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PT9926 datasheet

 ..1. Size:2323K  htsemi
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PT9926

PT9926 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@2.5V, Ids@5.2A ... See More ⇒

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PT9926

PT9926 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@2.5V, Ids@5.2A ... See More ⇒

 9.1. Size:323K  central
cmpt992p.pdf pdf_icon

PT9926

CMPT992 CMPT992P CMPT992F www.centralsemi.com CMPT992E DESCRIPTION SURFACE MOUNT PNP LOW NOISE The CENTRAL SEMICONDUCTOR CMPT992 types SILICON TRANSISTOR are PNP silicon low noise transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications where a high BVCEO is required. MARKING CODE SEE MAR... See More ⇒

 9.2. Size:323K  central
cmpt992.pdf pdf_icon

PT9926

CMPT992 CMPT992P CMPT992F www.centralsemi.com CMPT992E DESCRIPTION SURFACE MOUNT PNP LOW NOISE The CENTRAL SEMICONDUCTOR CMPT992 types SILICON TRANSISTOR are PNP silicon low noise transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications where a high BVCEO is required. MARKING CODE SEE MAR... See More ⇒

Detailed specifications: SI2302, SI2312, XP151A13COMR, AO3400, PT8205, PT8205A, PT8822, PT4410, 4N60, SI2301, SI2305, XP152A12COMR, AO3401, AO3407, PT4435, SM103, SM104

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.