PT9926
MOSFET. Datasheet pdf. Equivalent
Type Designator: PT9926
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 105
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package:
SOP8
PT9926
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PT9926
Datasheet (PDF)
..1. Size:2323K htsemi
pt9926.pdf
PT992620V Dual N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@2.5V, Ids@5.2A
..2. Size:158K cn puolop
pt9926.pdf
PT9926 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@2.5V, Ids@5.2A
9.1. Size:323K central
cmpt992p.pdf
CMPT992CMPT992PCMPT992Fwww.centralsemi.comCMPT992EDESCRIPTION:SURFACE MOUNT PNP LOW NOISEThe CENTRAL SEMICONDUCTOR CMPT992 types SILICON TRANSISTORare PNP silicon low noise transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications where a high BVCEO is required. MARKING CODE: SEE MAR
9.2. Size:323K central
cmpt992.pdf
CMPT992CMPT992PCMPT992Fwww.centralsemi.comCMPT992EDESCRIPTION:SURFACE MOUNT PNP LOW NOISEThe CENTRAL SEMICONDUCTOR CMPT992 types SILICON TRANSISTORare PNP silicon low noise transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications where a high BVCEO is required. MARKING CODE: SEE MAR
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