All MOSFET. PT4435 Datasheet

 

PT4435 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PT4435
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 10.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 37.2 nC
   Cossⓘ - Output Capacitance: 225 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP8

 PT4435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PT4435 Datasheet (PDF)

 ..1. Size:2581K  htsemi
 pt4435.pdf

PT4435 PT4435

PT443530V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-10.5A = 18m RDS(ON), Vgs@-4.5V, Ids@-6.0A = 30m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D D D D8 7 6 51 2 3 4S S S GMillimeter Millimeter REF. Min. Max. Min. Max. REF. A 5.80 6.20 M 0.10 0.25 B 4.80

 ..2. Size:342K  cn puolop
 pt4435.pdf

PT4435 PT4435

PT4435 -30V P-Channel Enhancement Mode MOSFETVDS= -30V RDS(ON), Vgs@-10V, Ids@-10.5A = 18m RDS(ON), Vgs@-4.5V, Ids@-6.0A = 30m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D D D D8 7 6 51 2 3 S S S GMillimeter Millimeter REF. Min. Max. Min. Max. REF. A 5.80 6.20 M 0.10 0.25 B 4.80

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: PTY80N06

 

 
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