All MOSFET. PT4435 Datasheet

 

PT4435 Datasheet and Replacement


   Type Designator: PT4435
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP8
 

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PT4435 Datasheet (PDF)

 ..1. Size:2581K  htsemi
 pt4435.pdf pdf_icon

PT4435

PT443530V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-10.5A = 18m RDS(ON), Vgs@-4.5V, Ids@-6.0A = 30m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D D D D8 7 6 51 2 3 4S S S GMillimeter Millimeter REF. Min. Max. Min. Max. REF. A 5.80 6.20 M 0.10 0.25 B 4.80

 ..2. Size:342K  cn puolop
 pt4435.pdf pdf_icon

PT4435

PT4435 -30V P-Channel Enhancement Mode MOSFETVDS= -30V RDS(ON), Vgs@-10V, Ids@-10.5A = 18m RDS(ON), Vgs@-4.5V, Ids@-6.0A = 30m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D D D D8 7 6 51 2 3 S S S GMillimeter Millimeter REF. Min. Max. Min. Max. REF. A 5.80 6.20 M 0.10 0.25 B 4.80

Datasheet: PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , AO3401 , AO3407 , 8N60 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 , U105D , 2N7002KDW .

History: RU60C20R5 | NCEAP018N85LL

Keywords - PT4435 MOSFET datasheet

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