PT4435 Datasheet. Specs and Replacement

Type Designator: PT4435  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOP8

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PT4435 datasheet

 ..1. Size:2581K  htsemi
 pt4435.pdf pdf_icon

PT4435

PT4435 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-10.5A = 18m RDS(ON), Vgs@-4.5V, Ids@-6.0A = 30m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D D D D 8 7 6 5 1 2 3 4 S S S G Millimeter Millimeter REF. Min. Max. Min. Max. REF. A 5.80 6.20 M 0.10 0.25 B 4.80 ... See More ⇒

 ..2. Size:342K  cn puolop
 pt4435.pdf pdf_icon

PT4435

PT4435 -30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-10.5A = 18m RDS(ON), Vgs@-4.5V, Ids@-6.0A = 30m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D D D D 8 7 6 5 1 2 3 S S S G Millimeter Millimeter REF. Min. Max. Min. Max. REF. A 5.80 6.20 M 0.10 0.25 B 4.80 ... See More ⇒

Detailed specifications: PT8822, PT4410, PT9926, SI2301, SI2305, XP152A12COMR, AO3401, AO3407, IRF530, SM103, SM104, SMY50, SMY51, SMY52, SMY60, U105D, 2N7002KDW

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