All MOSFET. PT4435 Datasheet

 

PT4435 MOSFET. Datasheet pdf. Equivalent

Type Designator: PT4435

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 10.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 37.2 nC

Drain-Source Capacitance (Cd): 225 pF

Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm

Package: SOP8

PT4435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PT4435 Datasheet (PDF)

1.1. pt4435.pdf Size:2581K _htsemi

PT4435
PT4435

PT4435 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-10.5A = 18m? RDS(ON), Vgs@-4.5V, Ids@-6.0A = 30m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D D D D 8 7 6 5 1 2 3 4 S S S G Millimeter Millimeter REF. Min. Max. Min. Max. REF. A 5.80 6.20 M 0.10 0.25 B 4.80 5.00 H

Datasheet: PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , AO3401 , AO3407 , J113 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 , U105D , 2N7002KDW .

 

 
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