All MOSFET. AFN4048WS Datasheet

 

AFN4048WS Datasheet and Replacement


   Type Designator: AFN4048WS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: SOP-8P
 

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AFN4048WS Datasheet (PDF)

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AFN4048WS

AFN4048WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4048WS, N-Channel enhancement mode 30V/15A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=10m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

Datasheet: AFN3484 , AFN3484S , AFN3606S , AFN3609S , AFN3630 , AFN3684S , AFN3806W , AFN3814W , AO3400A , AFN4102W , AFN4134 , AFN4134W , AFN4172S , AFN4172WS , AFN4210 , AFN4210W , AFN4214 .

History: GP2M004A060XX

Keywords - AFN4048WS MOSFET datasheet

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