AFN4048WS Datasheet. Specs and Replacement

Type Designator: AFN4048WS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: SOP-8P

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AFN4048WS datasheet

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AFN4048WS

AFN4048WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4048WS, N-Channel enhancement mode 30V/15A,RDS(ON)=8m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=10m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for... See More ⇒

Detailed specifications: AFN3484, AFN3484S, AFN3606S, AFN3609S, AFN3630, AFN3684S, AFN3806W, AFN3814W, AO3400A, AFN4102W, AFN4134, AFN4134W, AFN4172S, AFN4172WS, AFN4210, AFN4210W, AFN4214

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