All MOSFET. AFN4102W Datasheet

 

AFN4102W Datasheet and Replacement


   Type Designator: AFN4102W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.158 Ohm
   Package: SOP-8P
 

 AFN4102W substitution

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AFN4102W Datasheet (PDF)

 ..1. Size:504K  alfa-mos
 afn4102w.pdf pdf_icon

AFN4102W

AFN4102W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4102W, N-Channel enhancement mode 100V/3.8A,RDS(ON)=158m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=175m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

 9.1. Size:481K  alfa-mos
 afn4134.pdf pdf_icon

AFN4102W

AFN4134 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=20m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.2. Size:481K  alfa-mos
 afn4134w.pdf pdf_icon

AFN4102W

AFN4134W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4134W, N-Channel enhancement mode 30V/12A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=18m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.3. Size:571K  alfa-mos
 afn4172s.pdf pdf_icon

AFN4102W

AFN4172S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4172S, N-Channel enhancement mode 30V/15A,RDS(ON)=12m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=15m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

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Datasheet: AFN3484S , AFN3606S , AFN3609S , AFN3630 , AFN3684S , AFN3806W , AFN3814W , AFN4048WS , IRF730 , AFN4134 , AFN4134W , AFN4172S , AFN4172WS , AFN4210 , AFN4210W , AFN4214 , AFN4214W .

History: 2SK1813 | AP6679GJ-HF

Keywords - AFN4102W MOSFET datasheet

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