All MOSFET. AFN4172S Datasheet

 

AFN4172S Datasheet and Replacement


   Type Designator: AFN4172S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP-8P
 

 AFN4172S substitution

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AFN4172S Datasheet (PDF)

 ..1. Size:571K  alfa-mos
 afn4172s.pdf pdf_icon

AFN4172S

AFN4172S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4172S, N-Channel enhancement mode 30V/15A,RDS(ON)=12m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=15m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 7.1. Size:571K  alfa-mos
 afn4172ws.pdf pdf_icon

AFN4172S

AFN4172WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4172WS, N-Channel enhancement mode 30V/15A,RDS(ON)=12m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=15m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 7.2. Size:2313K  cn vbsemi
 afn4172wss8.pdf pdf_icon

AFN4172S

AFN4172WSS8www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switc

 9.1. Size:481K  alfa-mos
 afn4134.pdf pdf_icon

AFN4172S

AFN4134 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=20m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

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Datasheet: AFN3630 , AFN3684S , AFN3806W , AFN3814W , AFN4048WS , AFN4102W , AFN4134 , AFN4134W , MMIS60R580P , AFN4172WS , AFN4210 , AFN4210W , AFN4214 , AFN4214W , AFN4228 , AFN4248W , AFN4412 .

History: SUD50N04-05L | 1N65G-TA3-T | RU2021H | UTM4052L-S08-R | H05N60E | 2SK2050 | NTMFD4C87N

Keywords - AFN4172S MOSFET datasheet

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