AFN4214W Datasheet and Replacement. Cross Reference Search

AFN4214W Datasheet (PDF)

..1. Size:483K alfa-mos
afn4214w.pdf pdf_icon

AFN4214W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4214W, N-Channel enhancement mode 30V/9A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=18m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

7.1. Size:482K alfa-mos
afn4214.pdf pdf_icon

AFN4214 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4214, N-Channel enhancement mode 30V/9A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=20m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low

8.1. Size:578K alfa-mos
afn4210w.pdf pdf_icon

AFN4210W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4210W, N-Channel enhancement mode 30V/6.8A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.6A,RDS(ON)=40m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

8.2. Size:577K alfa-mos
afn4210.pdf pdf_icon

AFN4210 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4210, N-Channel enhancement mode 30V/6.8A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.6A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

Datasheet: AFN4102W , AFN4134 , AFN4134W , AFN4172S , AFN4172WS , AFN4210 , AFN4210W , AFN4214 , AON7403 , AFN4228 , AFN4248W , AFN4412 , AFN4412W , AFN4422 , AFN4424 , AFN4424W , AFN4440 .