AFN4214W Datasheet. Specs and Replacement

Type Designator: AFN4214W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: SOP-8P

AFN4214W substitution

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AFN4214W datasheet

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AFN4214W

AFN4214W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4214W, N-Channel enhancement mode 30V/9A,RDS(ON)=16m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=18m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo... See More ⇒

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AFN4214W

AFN4214 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4214, N-Channel enhancement mode 30V/9A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=20m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low ... See More ⇒

 8.1. Size:578K  alfa-mos
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AFN4214W

AFN4210W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4210W, N-Channel enhancement mode 30V/6.8A,RDS(ON)=32m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.6A,RDS(ON)=40m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

 8.2. Size:577K  alfa-mos
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AFN4214W

AFN4210 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4210, N-Channel enhancement mode 30V/6.8A,RDS(ON)=35m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.6A,RDS(ON)=42m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

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Detailed specifications: AFN4102W, AFN4134, AFN4134W, AFN4172S, AFN4172WS, AFN4210, AFN4210W, AFN4214, IRF9640, AFN4228, AFN4248W, AFN4412, AFN4412W, AFN4422, AFN4424, AFN4424W, AFN4440

Keywords - AFN4214W MOSFET specs

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