All MOSFET. AFN4634WS Datasheet

 

AFN4634WS Datasheet and Replacement


   Type Designator: AFN4634WS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: SOP-8P
 

 AFN4634WS substitution

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AFN4634WS Datasheet (PDF)

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AFN4634WS

AFN4634WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4634WS, N-Channel enhancement mode 30V/18A,RDS(ON)=5.8m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=7.2m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

Datasheet: AFN4412W , AFN4422 , AFN4424 , AFN4424W , AFN4440 , AFN4440W , AFN4486 , AFN4546 , IRFP064N , AFN4804 , AFN4808W , AFN4822S , AFN4822WS , AFN4850WS , AFN4874WS , AFN4896 , AFN4900W .

History: IXTH102N15T | NP180N055TUJ | IPS031N03L | FQA10N60C | BLP03N08-F | IXTA300N04T2-7 | ME2301DN-G

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