AFN4822S
MOSFET. Datasheet pdf. Equivalent
Type Designator: AFN4822S
Marking Code: 4822S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 75
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package:
SOP-8P
AFN4822S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFN4822S
Datasheet (PDF)
..1. Size:515K alfa-mos
afn4822s.pdf 
AFN4822S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.0A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
7.1. Size:515K alfa-mos
afn4822ws.pdf
AFN4822WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.0A,RDS(ON)=44m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.1. Size:537K alfa-mos
afn4804.pdf
AFN4804 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/10A,RDS(ON)= 70m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
9.2. Size:580K alfa-mos
afn4850ws.pdf
AFN4850WS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4850WS, N-Channel enhancement mode 60V/8.5A,RDS(ON)=20m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/7.2A,RDS(ON)=28m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.3. Size:581K alfa-mos
afn4808w.pdf
AFN4808W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4808W, N-Channel enhancement mode 20V/6.2A,RDS(ON)=30m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.6A,RDS(ON)=35m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.8A,RDS(ON)=42m@VGS=1.8V These devices are particularly suited for low Su
9.4. Size:577K alfa-mos
afn4874ws.pdf
AFN4874WS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4874WS, N-Channel enhancement mode 60V/12A,RDS(ON)=11m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/10A,RDS(ON)=13m@VGS=6.0V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
9.5. Size:582K alfa-mos
afn4896.pdf
AFN4896 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4896, N-Channel enhancement mode 100V/6.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/5.6A,RDS(ON)=125m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
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