AFN4874WS Datasheet. Specs and Replacement
Type Designator: AFN4874WS 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: SOP-8P
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AFN4874WS substitution
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AFN4874WS datasheet
afn4874ws.pdf
AFN4874WS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4874WS, N-Channel enhancement mode 60V/12A,RDS(ON)=11m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/10A,RDS(ON)=13m @VGS=6.0V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒
afn4822ws.pdf
AFN4822WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.0A,RDS(ON)=44m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited ... See More ⇒
afn4804.pdf
AFN4804 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/10A,RDS(ON)= 70m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒
afn4822s.pdf
AFN4822S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.0A,RDS(ON)=42m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒
Detailed specifications: AFN4486, AFN4546, AFN4634WS, AFN4804, AFN4808W, AFN4822S, AFN4822WS, AFN4850WS, IRF540N, AFN4896, AFN4900W, AFN4906, AFN4922W, AFN4924, AFN4924W, AFN4936S, AFN4936WS
Keywords - AFN4874WS MOSFET specs
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