AFN4874WS - Даташиты. Аналоги. Основные параметры

AFN4874WS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4874WS, N-Channel enhancement mode 60V/12A,RDS(ON)=11m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/10A,RDS(ON)=13m@VGS=6.0V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

AFN4822WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.0A,RDS(ON)=44m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

AFN4804 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/10A,RDS(ON)= 70m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

AFN4822S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.0A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

AFN4850WS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4850WS, N-Channel enhancement mode 60V/8.5A,RDS(ON)=20m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/7.2A,RDS(ON)=28m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

AFN4808W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4808W, N-Channel enhancement mode 20V/6.2A,RDS(ON)=30m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.6A,RDS(ON)=35m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.8A,RDS(ON)=42m@VGS=1.8V These devices are particularly suited for low Su

AFN4896 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4896, N-Channel enhancement mode 100V/6.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/5.6A,RDS(ON)=125m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited